Ушбу ишга иқтибос қилган ишлар

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Иш: Structure of thermoelectric films of higher manganese silicide on silicon according to electron microscopy data

1. The Influence of Structural Defects in Silicon on the Formation of Photosensitive Mn4Si7–Si❬Mn❭–Mn4Si7 and Mn4Si7–Si❬Mn❭–M Heterostructures

   T. S. Kamilov, А.С. Рысбаев, V. V. Klechkovskaya +3

   МақолаSemiconductor materials and interfacesApplied Solar Energy201921 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.079743

2. Obtaining higher manganese silicide films with high thermoelectric properties

   I. R. Bekpulatov, D.S. Shomukhammedova, Д. М. Шукурова +1

   МақолаSemiconductor materials and interfacesE3S Web of Conferences20239 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.253378

3. Structure of МеSi Silicide Films (Me: Li, Rb, K and Cs) According to Electron Microscopy Data and the Diffraction of Slow Electrons

   M.T. Normuradov, A. S. Risbaev, J. B. Khujaniyozov +1

   МақолаSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20202 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.213643

4. High-Sensitivity Temperature Sensor on the Basis of Single-Crystal Si(111) Implanted from Multiple Directions with P+ and B+ Ions

   А.С. Рысбаев, M. T. Normurodov, A.M. Rakhimov +2

   МақолаIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20201 иқтибос

   ABIABI:AkademIndex/openalex/2020.article.001910

5. Thermal sensor based on si single crystal implanted with different parties P⁺ and B⁺ ions

   I. R. Bekpulatov, Sh. K. Saliyeva, Z. R. Saidakhmedova +1

   МақолаSemiconductor materials and interfacesE3S Web of Conferences20230 иқтибос

   ABIABI:AkademIndex/openalex/2023.article.009630