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Иш: Influence of structural defects in silicon on formation of photosensitive heterostructures Mn4Si7-Si-Mn4Si7 and Mn4Si7-Si-M

1. The Influence of Structural Defects in Silicon on the Formation of Photosensitive Mn4Si7–Si❬Mn❭–Mn4Si7 and Mn4Si7–Si❬Mn❭–M Heterostructures

   T. S. Kamilov, А.С. Рысбаев, V. V. Klechkovskaya +3

   МақолаSemiconductor materials and interfacesApplied Solar Energy201921 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.079743

2. Obtaining and studying the composition, structure and properties of nanophases and nanolayers of CoSi ₂

   Б. Е. Умирзаков, Zh. M. Jumayev, I. R. Bekpulatov +3

   МақолаSemiconductor materials and interfacesMaterials Research Innovations20243 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.267076

3. Properties of “Higher Manganese Silicide-Silicon” Heterostructure

   Kobiljon K. ugli Kurbonaliev, Н. Ф. Зикриллаев, A. Zh. Khusanov

   МақолаSemiconductor materials and interfacesEast European Journal of Physics20230 иқтибос

   ABIABI:AkademIndex/openalex/2023.article.011308