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Ушбу иш иқтибос қилган ишлар

10 та иш

Иш: Structure of МеSi Silicide Films (Me: Li, Rb, K and Cs) According to Electron Microscopy Data and the Diffraction of Slow Electrons

  1. Formation of nanosize silicides films on the Si(111) and Si(100) surfaces by low-energy ion implantation

    А.С. Рысбаев, Zh. B. Khuzhaniyazov, A.M. Rakhimov +1

    МақолаSemiconductor materials and interfacesTechnical Physics201415 иқтибос
    ABI

  2. Peculiarities of the electron structure of nanosized ion-implanted layers in silicon

    А.С. Рысбаев, Zh. B. Khuzhaniyazov, M.T. Normuradov +2

    МақолаSemiconductor materials and interfacesTechnical Physics20149 иқтибос
    ABI

  3. Electronic properties of semiconducting silicides: fundamentals and recent predictions

    L. Ivanenko, В. Л. Шапошников, А. Б. Филонов +6

    Мақола20046 иқтибос
    ABI

  4. Structure of thermoelectric films of higher manganese silicide on silicon according to electron microscopy data

    Andrey Orekhov, T. S. Kamilov, B.V. Ibragimova +2

    МақолаSemiconductor materials and interfacesSemiconductors20175 иқтибос
    ABI

  5. Special Applications

    S. P. Murarka

    Боб19833 иқтибос
    ABI

  6. Implantation of sodium ions into germanium

    V.M. Korol, Yu. Kudriavtsev

    Мақола20123 иқтибос
    ABI

  7. Synthesis and applications of metal silicidenanowires

    Andrew L. Schmitt, Jeremy M. Higgins, Jeannine R. Szczech +1

    Мақола20093 иқтибос
    ABI

  8. The growth of manganese layers on Si(100) at room temperature: A photoelectron spectroscopy study

    Christopher A. Nolph, E. Vescovo, Petra Reinke

    Мақола20093 иқтибос
    ABI

  9. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI

  10. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI