Ушбу иш иқтибос қилган ишлар

7 та иш

Иш: On the Formation of Silicide Films of Metals (Li, Cs, Rb, and Ba) During Ion Implantation in Si and Subsequent Thermal Annealing

1. The Influence of Structural Defects in Silicon on the Formation of Photosensitive Mn4Si7–Si❬Mn❭–Mn4Si7 and Mn4Si7–Si❬Mn❭–M Heterostructures

   T. S. Kamilov, А.С. Рысбаев, V. V. Klechkovskaya +3

   МақолаSemiconductor materials and interfacesApplied Solar Energy201921 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.079743

2. Electron microscopy characterization of higher manganese silicide film structure on silicon

   Andrey Orekhov, T. S. Kamilov, Anton S. Orekhov +3

   МақолаSemiconductor materials and interfacesNanotechnologies in Russia20167 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.079735

3. Electronic properties of semiconducting silicides: fundamentals and recent predictions

   L. Ivanenko, В. Л. Шапошников, А. Б. Филонов +6

   Мақола20046 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.199255

4. Precipitates of MnSi cubic phase in tetragonal Mn4Si7 crystal

   Elena I. Suvorova, V. V. Klechkovskaya

   Мақола20133 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.527235

5. Physicochemical interaction at the MnSi1.71–1.75/Mo interface

   Л. И. Петрова, M. I. Fedorov, V. K. Zaĭtsev +1

   Мақола20132 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.527237

6. Сарлавҳасиз

   Бошқа2 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.553964

7. Сарлавҳасиз

   Бошқа1 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.553963