Ушбу ишга иқтибос қилган ишлар

3 та иш

Иш: Semiconductor lasers with internal wavelength selection

1. Electronic structure of Ga1–x Al x As nanostructures grown on the GaAs surface by ion implantation

   S. B. Donaev, Б. Е. Умирзаков, Д. А. Ташмухамедова

   МақолаIon-surface interactions and analysisTechnical Physics201513 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.095299

2. Electronic and Optical Properties of GaAlAs/GaAs Thin Films

   Б. Е. Умирзаков, S. B. Donaev, N. M. Mustafaeva

   МақолаPhotocathodes and Microchannel PlatesTechnical Physics20198 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.232443

3. The Effect of Stepwise Postimplantation Annealing on the Composition and Structure of Silicon Surface Layers Implanted with Alkali Metal Ions

   Б. Е. Умирзаков, З. А. Исаханов, G. Kh. Allaerova +1

   МақолаSemiconductor materials and interfacesTechnical Physics Letters20210 иқтибос

   ABIABI:AkademIndex/openalex/2021.article.004233