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Ушбу иш иқтибос қилган ишлар

15 та иш

Иш: Liquid-phase epitaxy of the (Si2)1 − x − y (Ge2) x (GaAs) y substitutional solid solution (0 ≤ x ≤ 0.91, 0 ≤ y ≤ 0.94) and their electrophysical properties

  1. Constitution of Binary Alloys

    Max Hansen, K. Anderko, H. W. Salzberg

    Мақола195826 иқтибос
    ABI

  2. Growth of (InSb)1 − x (Sn2) x films on GaAs substrates by liquid-phase epitaxy

    А. С. Саидов, М. С. Саидов, Sh. N. Usmonov +1

    МақолаSemiconductor Quantum Structures and DevicesSemiconductors20109 иқтибос
    ABI

  3. Structural and some electrophysical properties of the solid solutions Si1 − x Sn x (0 ≤ x ≤ 0.04)

    А. С. Саидов, Sh. N. Usmonov, M. U. Kalanov +2

    МақолаAdvanced Surface Polishing TechniquesPhysics of the Solid State20138 иқтибос
    ABI

  4. Growth of (GaAs)1 − x (ZnSe) x solid solution films and investigation of their structural and some photoelectric properties

    А. С. Саидов, М. С. Саидов, Sh. N. Usmonov +4

    МақолаChalcogenide Semiconductor Thin FilmsPhysics of the Solid State20118 иқтибос
    ABI

  5. Possibility of obtaining the (GaSb)1 − x (Si2) x films on silicon substrates by the method of liquid-phase epitaxy

    Sh. N. Usmonov, А. С. Саидов, A. Yu. Leyderman +2

    МақолаSemiconductor materials and interfacesSemiconductors20098 иқтибос
    ABI

  6. Сарлавҳасиз

    Бошқа7 иқтибос
    ABI

  7. Growth of GaInAsSb Alloys by MOCVD and Characterization of GaInAsSb / GaSb p‐n Photodiodes

    G. Bougnot, F. Delannoy, A. Foucaran +4

    Мақола19884 иқтибос
    ABI

  8. Growth of Ge1 − x Sn x solid solution films and study of their structural properties and some of their photoelectric properties

    А. С. Саидов, Sh. N. Usmonov, U. P. Asatova

    МақолаPhotonic and Optical DevicesSemiconductors20124 иқтибос
    ABI

  9. Surfactant-mediated growth of Si 1-x Sn x layers by molecular-beam epitaxy

    M. F. Fyhn, J. Lundsgaard Hansen, J. Chevallier +1

    Мақола19993 иқтибос
    ABI

  10. Direct energy gap group IV semiconductor alloys and quantum dot arrays in SnxGe1−x/Ge and SnxSi1−x/Si alloy systems

    Regina Ragan, Kyu Sung Min, Harry A. Atwater

    Мақола20013 иқтибос
    ABI

  11. Synthesis and characterization of (Si2)1−x−y (Ge2) x (GaAs) y continuous solid solutions

    А. С. Саидов, Sh. N. Usmonov, Khomidkhodzha Kholikov +1

    МақолаSemiconductor materials and interfacesTechnical Physics Letters20073 иқтибос
    ABI

  12. IR spectroscopy of lattice vibrations and comparative analysis of the ZnTe/CdTe quantum-dot superlattices on the GaAs substrate and with the ZnTe and CdTe buffer layers

    S. P. Kozyrev

    Мақола20093 иқтибос
    ABI

  13. The Application of Scanning Tunneling Microscopy to In Situ Studies of Nickel Electrodes under Potential Control

    Ovadia Lev, Fu‐Ren F. Fan, Allen J. Bard

    Мақола19883 иқтибос
    ABI

  14. Characterization of Ge-on-Si virtual substrates and single junction GaAs solar cells

    R. Ginige, Brian Corbett, M. Modreanu +5

    Мақола20062 иқтибос
    ABI

  15. Monolithic CMOS-compatible AlGaInP visible LED arrays on silicon on lattice-engineered substrates (SOLES)

    Kamesh Chilukuri, M. Mori, Carl L. Dohrman +1

    Мақола20062 иқтибос
    ABI