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7 та иш

Иш: Dilute nonisovalent (II-VI)-(III-V) semiconductor alloys: Monodoping, codoping, and cluster doping in ZnSe-GaAs

  1. Structural Studies of the Epitaxial Layer of a Substitutional Solid Solution (GaAs)<sub>1−<i>x</i></sub>(ZnSe)<sub><i>x</i></sub> with Nanocrystals

    А. С. Саидов, Sh. N. Usmonov, D. V. Saparov

    МақолаQuantum Dots Synthesis And PropertiesAdvances in Materials Science and Engineering20198 иқтибос
    ABI

  2. Features of liquid-phase epitaxy of new solid solutions of (GaAs)1−y−z(Ge<sub>2</sub>)y(ZnSe)z and their photoelectric properties

    А. С. Саидов, D. V. Saparov, Sh. N. Usmonov +2

    МақолаChalcogenide Semiconductor Thin FilmsInternational Journal of Modern Physics B20226 иқтибос
    ABI

  3. Synthesis, Structure and Electro-Physical Properties n-GaAs–p-(GaAs)1 –x–y(Ge2)x(ZnSe)y Heterostructures (Review)

    С. З. Зайнабидинов, А. С. Саидов, M. U. Kalanov +1

    МақолаSemiconductor materials and interfacesApplied Solar Energy20192 иқтибос
    ABI

  4. Growing the solid solution of molekular substitution (GaAs)<sub>1-z</sub>(ZnSe)<sub>z</sub>

    А. С. Саидов, D. V. Saparov, Shukrullo Usmonov +2

    МақолаChalcogenide Semiconductor Thin FilmsIOP Conference Series Materials Science and Engineering20212 иқтибос
    ABI

  5. Studies of the crystal structure of solid solutions (Sn2)1−x−y(GaAs)x(ZnSe)y, (GaAs)1−x(ZnSe)x grown from liquid phase

    A. Sh. Razzokov, А. С. Саидов, B. Allabergenov +3

    МақолаChalcogenide Semiconductor Thin FilmsJournal of Crystal Growth20232 иқтибос
    ABI

  6. Regarding Spectrum Photosensitivity and Certain GaAs’s Structural Properties Heterostructures, Namely (GaAs)<sub>1-x-y</sub>(Ge2)<sub>x</sub>(ZnSe)<sub>y</sub>

    Shavkat Ismailov, D. V. Saparov, А. С. Саидов +2

    МақолаPhase-change materials and chalcogenides20240 иқтибос
    ABI

  7. The Mechanism of Current Transfer in n-GaAs – p(ZnSe)1-x-y(Ge2)x(GaAs1–δBiδ)y Heterostructures

    С. З. Зайнабидинов, Khotamjon J. Mansurov, Akramjon Y. Boboev +1

    МақолаSemiconductor materials and interfacesEast European Journal of Physics20240 иқтибос
    ABI