Ушбу ишга иқтибос қилган ишлар

2 та иш

Иш: Research of <i>p</i>‐<i>i</i>‐<i>n</i> Junctions Based on 4<i>H</i>‐SiC Fabricated by Low‐Temperature Diffusion of Boron

1. Spectral Dependence of Optical Absorption of 4<i>H</i>-SiC Doped with Boron and Aluminum

   I. G. Atabaev, Kh. N. Juraev, M. U. Hajiev

   МақолаSilicon Carbide Semiconductor TechnologiesJournal of Spectroscopy20181 иқтибос

   ABIABI:AkademIndex/openalex/2018.article.000197

2. Activation Energy of the Conductance of p–n-4H-SiC 〈Al〉 Structures Doped with Aluminum by the Method of Low-Temperature Diffusion

   Kh. N. Zhuraev, А. Yusupov, A. G. Gulyamov +3

   МақолаSilicon Carbide Semiconductor TechnologiesJournal of Engineering Physics and Thermophysics20201 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.470164