Ушбу ишга иқтибос қилган ишлар

3 та иш

Иш: Study of the intermediate layer at the n +-CdS/p-CdTe interface

1. Mechanism of charge transfer in injection photodiodes based on the In-n +-CdS-n-CdS x Te1 − x -p-Zn x Cd1 − x Te-Mo structure

   Ш. А. Мирсагатов, A. Yu. Leĭderman, O. K. Ataboev

   МақолаChalcogenide Semiconductor Thin FilmsPhysics of the Solid State20136 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.393702

2. Effect of temperature on the current transfer mechanism in the reverse I–V characteristics of the <i>n</i>-CdS/<i>i</i>-CdS_<i>x</i>Te1−x/<i>p</i>-CdTe heterostructure

   А.С. Ачилов, R. R. Kabulov, Sharifa B. Utamuradova +1

   МақолаChalcogenide Semiconductor Thin FilmsModern Physics Letters B20234 иқтибос

   ABIABI:AkademIndex/openalex/2023.article.001297

3. Photoelectric properties of an injection photodetector based on alloys of II–VI compounds

   Ш. А. Мирсагатов, O. K. Ataboev, B. N. Zaveryukhin +1

   МақолаChalcogenide Semiconductor Thin FilmsSemiconductors20143 иқтибос

   ABIABI:AkademIndex/openalex/2014.article.000132