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Ушбу иш иқтибос қилган ишлар

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Иш: Possibility of obtaining the (GaSb)1 − x (Si2) x films on silicon substrates by the method of liquid-phase epitaxy

  1. Physics of Semiconductor Devices

    J.-P. Colinge, Cindy Colinge

    Китоб200258 иқтибос
    ABI

  2. Constitution of Binary Alloys

    Max Hansen, K. Anderko, H. W. Salzberg

    Мақола195826 иқтибос
    ABI

  3. Liquid-phase epitaxy of solid solutions (Ge2)1−x(ZnSe)x

    А. С. Саидов, A. Sh. Razzakov, V.A. Risaeva +1

    МақолаChalcogenide Semiconductor Thin FilmsMaterials Chemistry and Physics200125 иқтибос
    ABI

  4. Physics of Semiconductor Devices

    Geoffrey Pridham

    Мақола197019 иқтибос
    ABI

  5. On the theory of sublinear current-voltage characteristics of semiconductor structures

    A. Yu. Leĭderman, P. M. Karageorgy‐Alkalaev

    Мақола197812 иқтибос
    ABI

  6. Сарлавҳасиз

    Бошқа7 иқтибос
    ABI

  7. Mechanism of charge transfer in n-CdS/p-CdTe heterostructures with a thick layer of the CdTe1 − x S x solid solution

    Kh. Kh. Ismoilov, A. M. Abdugafurov, Ш. А. Мирсагатов +1

    МақолаAdvanced Semiconductor Detectors and MaterialsPhysics of the Solid State20086 иқтибос
    ABI

  8. Preparation of GaSb substrates for GaSb and GaInAsSb growth by organometallic vapor phase epitaxy

    C.A Wang, D.A. Shiau, Ann Lin

    Мақола20032 иқтибос
    ABI

  9. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI

  10. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI

  11. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI