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Иш: Combined Influence of Gate Oxide and Back Oxide Materials on Self-Heating and DIBL Effect in 2D MOS2-Based MOSFETs
Single-layer MoS2 transistors
Branimir Radisavljevic, Aleksandra Rađenović, Jacopo Brivio +2
Мақола20118 иқтибосABIPhysical origin of negative differential resistance in SOI transistors
Liam McDaid, Steven Hall, Phil Mellor +2
Мақола19895 иқтибосABIThermal Properties of Ultrathin Hafnium Oxide Gate Dielectric Films
Matthew A. Panzer, Michael Shandalov, Jeremy Rowlette +4
Мақола20094 иқтибосABIMOSFET scaling: Impact of two-dimensional channel materials
R. Granzner, Zhansong Geng, W. Kinberger +1
Мақола20164 иқтибосABIChannel Length Scaling of MoS<sub>2</sub> MOSFETs
Han Liu, Adam T. Neal, Peide D. Ye
Мақола20123 иқтибосABISimulation of 50-nm Gate Graphene Nanoribbon Transistors
Cedric Nanmeni Bondja, Zhansong Geng, R. Granzner +2
Мақола20162 иқтибосABIAdvances in MoS2-Based Field Effect Transistors (FETs)
Xin Tong, Eric Ashalley, Feng Lin +2
Шарҳ мақола20152 иқтибосABIThe contribution of gate and drain voltages to temperature distribution along the channel in 2D MoS<sub>2</sub> based MOSFET
A. É. Atamuratov, X. Sh. Saparov, T.A. Atamuratov +2
МақолаGraphene research and applications2021 International Conference on Information Science and Communications Technologies (ICISCT)20212 иқтибосABI