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5 та иш

Иш: RESEARCH OF THE DEPENDENCE OF CURRENT-VOLTAGE CHARACTERISTICS OF p-Si-n-(Si2)1 - x - y(Ge2)x(ZnSe)y-STRUCTURES ON TEMPERATURE

  1. Growth of (InSb)1 − x (Sn2) x films on GaAs substrates by liquid-phase epitaxy

    А. С. Саидов, М. С. Саидов, Sh. N. Usmonov +1

    МақолаSemiconductor Quantum Structures and DevicesSemiconductors20109 иқтибос
    ABI

  2. Growth of (GaAs)1 − x (ZnSe) x solid solution films and investigation of their structural and some photoelectric properties

    А. С. Саидов, М. С. Саидов, Sh. N. Usmonov +4

    МақолаChalcogenide Semiconductor Thin FilmsPhysics of the Solid State20118 иқтибос
    ABI

  3. About Possibility of Development Synergetic Processes in Semiconductors of Type AIIIBV

    Ada Leyderman, А. С. Саидов, Muslim Khashaev +1

    МақолаAdvanced Semiconductor Detectors and MaterialsJournal of Materials Science Research20134 иқтибос
    ABI

  4. Liquid-phase epitaxy of the (Si2)1 − x − y (Ge2) x (GaAs) y substitutional solid solution (0 ≤ x ≤ 0.91, 0 ≤ y ≤ 0.94) and their electrophysical properties

    А. С. Саидов, Sh. N. Usmonov, М. С. Саидов

    МақолаSilicon Nanostructures and PhotoluminescenceSemiconductors20153 иқтибос
    ABI

  5. Photosensitivity of pSi-n(GaSb)1 − x − y (Si2) x (GaAs) y , pSi-n(GaSb)1 − x − y (Si2) x (GaAs) y ,-n(GaSb) structures

    А. С. Саидов, М. С. Саидов, Sh. N. Usmonov +2

    МақолаSemiconductor materials and interfacesApplied Solar Energy20081 иқтибос
    ABI