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Ушбу иш иқтибос қилган ишлар

20 та иш

Иш: Impact of the channel shape, back oxide and gate oxide layers on self-heating in nanoscale JL FINFET

  1. Scaling of Trigate Junctionless Nanowire MOSFET With Gate Length Down to 13 nm

    Sylvain Barraud, Matthieu Berthomé, R. Coquand +7

    Мақола20126 иқтибос
    ABI

  2. Implementation of the Density Gradient Quantum Corrections for 3-D Simulations of Multigate Nanoscaled Transistors

    Antonio J. García‐Loureiro, Natalia Seoane, M. Aldegunde +4

    Мақола20116 иқтибос
    ABI

  3. The Effect of the Fin Shape and Thickness of the Buried Oxide on the DIBL Effect in an SOI FinFET

    A.E. Abdikarimov, А. Yusupov, A. É. Atamuratov

    МақолаSemiconductor materials and devicesTechnical Physics Letters20186 иқтибос
    ABI

  4. Physical origin of negative differential resistance in SOI transistors

    Liam McDaid, Steven Hall, Phil Mellor +2

    Мақола19895 иқтибос
    ABI

  5. Simulation of DIBL effect in 25 nm SOI-FinFET with the different body shapes

    A. É. Atamuratov, A.E. Abdikarimov, M. M. Khalilloev +4

    МақолаAdvancements in Semiconductor Devices and Circuit DesignNanosystems Physics Chemistry Mathematics20174 иқтибос
    ABI

  6. Integrated modeling of Self-heating of confined geometry (FinFET, NWFET, and NSHFET) transistors and its implications for the reliability of sub-20 nm modern integrated circuits

    Woojin Ahn, SangHoon Shin, Chang‐Ming Jiang +3

    Мақола20184 иқтибос
    ABI

  7. Role of non-uniform channel doping in improving the nanoscale JL DG MOSFET reliability against the self-heating effects

    H. Ferhati, Fouzi Douak, F. Djeffal

    Мақола20172 иқтибос
    ABI

  8. Reduction of self-heating effect using selective buried oxide (SELBOX) charge plasma based junctionless transistor

    Amrish Kumar, Abhinav Gupta, Sanjeev Rai

    Мақола20182 иқтибос
    ABI

  9. Numerical study on the self-heating effects for vacuum/high-k gate dielectric tri-gate FinFETs

    Guohe Zhang, Junhua Lai, Shengli Zhu +3

    Мақола20192 иқтибос
    ABI

  10. SOI versus bulk-silicon nanoscale FinFETs

    J.G. Fossum, Zhenming Zhou, L. Mathew +1

    Мақола20092 иқтибос
    ABI

  11. Simulation of DIBL effect in junctionless SOI MOSFETs with extended gate

    A. É. Atamuratov, M. M. Khalilloev, A.E. Abdikarimov +4

    МақолаAdvancements in Semiconductor Devices and Circuit DesignNanosystems Physics Chemistry Mathematics20172 иқтибос
    ABI

  12. Contribution to the Physical Modelling of Single Charged Defects Causing the Random Telegraph Noise in Junctionless FinFET

    A. É. Atamuratov, M. M. Khalilloev, Ahmed Yusupov +3

    МақолаSemiconductor materials and devicesApplied Sciences20202 иқтибос
    ABI

  13. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI

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    Бошқа1 иқтибос
    ABI

  20. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI