Ушбу ишга иқтибос қилган ишлар

2 та иш

Иш: Resistivity of Bulk Silicon and of Diffused Layers in Silicon

1. The Elemental Composition Investigation of Silicon Doped with Gallium and Antimony Atoms

   Х. М. Илиев, S. Koveshnikov, B. O. Isakov +3

   МақолаSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry20242 иқтибос

   ABIABI:AkademIndex/openalex/2024.article.002753

2. Effect of anodic etching of heavily doped silicon on the location of the plasma minimum

   V. B. Shuman

   МақолаSilicon Nanostructures and PhotoluminescenceTechnical Physics Letters19990 иқтибос

   ABIABI:AkademIndex/openalex/1999.article.000192