Ушбу ишга иқтибос қилган ишлар

4 та иш

Иш: Formation of defects in GaAs and Si as a result of Pd deposition onto the surface

1. Effect of the Disordering of Thin Surface Layers on the Electronic and Optical Properties of Si(111)

   Б. Е. Умирзаков, Д. А. Ташмухамедова, A. K. Tashatov +2

   МақолаSemiconductor materials and interfacesSemiconductors20204 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.402217

2. Using of ion implantation for obtaining nanostructures with the wide band GaP based on GaP

   S. B. Donaev, V N Karimova, A T Azimov +2

   МақолаNanowire Synthesis and ApplicationsIOP Conference Series Earth and Environmental Science20203 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.452998

3. On the Band-Gap Width of NiSi2 Nanocrystals Created in the Surface Region of Si Using Ion Implantation

   N. M. Mustafoeva, A. K. Tashatov, Б. Е. Умирзаков

   МақолаSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20230 иқтибос

   ABIABI:AkademIndex/openalex/2023.article.007102

4. Effect of the Angle of Incidence of Low-Energy Ar+ Ion Beams on the Composition and Structure of the GaAs Surface

   Д. А. Ташмухамедова, Б. Е. Умирзаков, Z. A. Tursunmetova

   МақолаIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20240 иқтибос

   ABIABI:AkademIndex/openalex/2024.article.010337