Ушбу ишга иқтибос қилган ишлар

3 та иш

Иш: Theory of electronic structure evolution in GaAsN and GaPN alloys

1. Using of ion implantation for obtaining nanostructures with the wide band GaP based on GaP

   S. B. Donaev, V N Karimova, A T Azimov +2

   МақолаNanowire Synthesis and ApplicationsIOP Conference Series Earth and Environmental Science20203 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.452998

2. Effect of the Implantation of Al+ Ions on the Composition, Electronic and Crystalline Structure of the GaP(111) Surface

   S. B. Donaev, Б. Е. Умирзаков

   МақолаSemiconductor Quantum Structures and DevicesSemiconductors20202 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.415746

3. The Effect of Stepwise Postimplantation Annealing on the Composition and Structure of Silicon Surface Layers Implanted with Alkali Metal Ions

   Б. Е. Умирзаков, З. А. Исаханов, G. Kh. Allaerova +1

   МақолаSemiconductor materials and interfacesTechnical Physics Letters20210 иқтибос

   ABIABI:AkademIndex/openalex/2021.article.004233