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Ушбу иш иқтибос қилган ишлар

15 та иш

Иш: Influence of Various Impacts on the Composition and Structure of the Surface of Single-Crystal Si

  1. Electron spectroscopy of the nanostructures created in Si, GaAs, and CaF2 surface layers using low-energy ion implantation

    Б. Е. Умирзаков, Д. А. Ташмухамедова, D. M. Muradkabilov +1

    МақолаSemiconductor materials and interfacesTechnical Physics201319 иқтибос
    ABI

  2. Obtaining of epitaxial films of metal silicides by ion implantation and molecular beam epitaxy

    Б. Е. Умирзаков, Д. А. Ташмухамедова, E.U. Boltaev +1

    МақолаSemiconductor materials and interfacesMaterials Science and Engineering B200314 иқтибос
    ABI

  3. Method for additional purification of the surface of Si(111) single crystal

    A. S. Risbaev, J. B. Khujaniyazov, I. R. Bekpulatov +1

    МақолаMaterial Properties and Failure MechanismsJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201712 иқтибос
    ABI

  4. Features of CoSi2 phase formation by two-stage rapid thermal annealing of Ti/Co/Ti/Si(100) structures

    V. I. Rudakov, Yu. I. Denisenko, В. В. Наумов +1

    Мақола20119 иқтибос
    ABI

  5. Surface Science

    Kenjiro Oura, Michiko Katayama, А. В. Зотов +2

    Китоб20035 иқтибос
    ABI

  6. Effect of Chemical Treatment of a Silicon Surface on the Quality and Structure of Silicon-Carbide Epitaxial Films Synthesized by Atom Substitution

    I. P. Kalinkin, С. А. Кукушкін, А. В. Осипов

    Мақола20184 иқтибос
    ABI

  7. Formation of InAs nanoclusters in silicon by high-dose ion implantation: Experimental data and simulation results

    А. Ф. Комаров, Ф. Ф. Комаров, O. V. Milchanin +5

    Мақола20153 иқтибос
    ABI

  8. Using of ion implantation for obtaining nanostructures with the wide band GaP based on GaP

    S. B. Donaev, V N Karimova, A T Azimov +2

    МақолаNanowire Synthesis and ApplicationsIOP Conference Series Earth and Environmental Science20203 иқтибос
    ABI

  9. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI

  10. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI

  11. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI

  12. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI

  13. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI

  14. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI

  15. Optimum technological modes of ion implantation and subsequent annealing for formation of thin nanosized silicide films

    I. R. Bekpulatov, Ilkhom Turapov, S. T. Abraeva +1

    МақолаSemiconductor materials and interfacesE3S Web of Conferences20211 иқтибос
    ABI