N. V. Seredova

2 ta ish

Russian Academy of Sciences

1. Growth of SiC and GaN on Porous Buffer Layers

   M. G. Mynbaeva, N.S. Savkina, A. S. Tregubova +12

   MaqolaGaN-based semiconductor devices and materialsMaterials science forum20000 iqtibos

   ABIABI:AkademIndex/2000.article.000163

2. Growth and Investigation of n-AlGaN/p-6H-SiC/n-6H-SiC Heterostructures

   A. А. Lebedev, Oleg Ledyaev, Anatoly M. Strel’chuk +6

   MaqolaOAOchiq kirishGaN-based semiconductor devices and materialsMaterials science forum20060 iqtibos

   ABIABI:AkademIndex/2006.article.000281