Ushbu ish iqtibos qilgan ishlar

8 ta ish

Ish: Comparative Study of 4H-SiC Irradiated with Neutrons and Heavy Ions

1. Deep Defect Centers in Silicon Carbide Monitored with Deep Level Transient Spectroscopy

   T. Dalibor, Gerhard Pensl, H. Matsunami +4

   Maqola19975 iqtibos

   ABIABI:AkademIndex/2026.other.155792

2. High-dose Al-implanted 4H-SiC p+-n-n+ junctions

   E. V. Kalinina, G. Kholujanov, В. Н. Соловьев +11

   Maqola20004 iqtibos

   ABIABI:AkademIndex/2026.other.534891

3. Effect of irradiation with fast neutrons on electrical characteristics of devices based on CVD 4H-SiC epitaxial layers

   E. V. Kalinina, G. Kholuyanov, D. V. Davydov +5

   Maqola20033 iqtibos

   ABIABI:AkademIndex/2026.other.382031

4. Influence of proton irradiation on recombination current in 6H–SiC pn structures

   Anatoly M. Strel’chuk, V. V. Kozlovski, N.S. Savkina +2

   Maqola19993 iqtibos

   ABIABI:AkademIndex/2026.other.382032

5. Swift Heavy Ion Irradiation Effects in SiC Measured by Positrons

   L. Liszkay, K. Havancsák, M.F. Barthe +6

   Maqola20012 iqtibos

   ABIABI:AkademIndex/2026.other.607488

6. Optical and electrical properties of 6H α-SiC irradiated by swift xenon ions

   M. Levalois, I. Lhermitte-Sebire, P. Marié +2

   Maqola19962 iqtibos

   ABIABI:AkademIndex/2026.other.607489

7. Optical and electrical properties of 4H-SiC irradiated with fast neutrons and high-energy heavy ions

   E. V. Kalinina, G. Kholuyanov, Grigory Onushkin +7

   Maqola20042 iqtibos

   ABIABI:AkademIndex/2026.other.652946

8. Sarlavhasiz

   Boshqa1 iqtibos

   ABIABI:AkademIndex/2026.other.655038