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14 ta ish

Ish: The Self-Heating Effect in Junctionless Fin Field-Effect Transistors Based on Silicon-on-Insulator Structures with Different Channel Shapes

  1. Multigate transistors as the future of classical metal–oxide–semiconductor field-effect transistors

    Isabelle Ferain, Cynthia A. Colinge, Jean-Pierre Colinge

    Maqola201112 iqtibos
    ABI

  2. Scaling of Trigate Junctionless Nanowire MOSFET With Gate Length Down to 13 nm

    Sylvain Barraud, Matthieu Berthomé, R. Coquand +7

    Maqola20127 iqtibos
    ABI

  3. Implementation of the Density Gradient Quantum Corrections for 3-D Simulations of Multigate Nanoscaled Transistors

    Antonio J. García‐Loureiro, Natalia Seoane, M. Aldegunde +4

    Maqola20117 iqtibos
    ABI

  4. Impact of self-heating effect on the performance of hybrid FinFET

    Rajeev Pankaj Nelapati, K. Sivasankaran

    Maqola20186 iqtibos
    ABI

  5. Large random telegraph noise in sub-threshold operation of nano-scale nMOSFETs

    J. P. Campbell, Lihua Yu, Kin P. Cheung +4

    Maqola20096 iqtibos
    ABI

  6. The Effect of the Fin Shape and Thickness of the Buried Oxide on the DIBL Effect in an SOI FinFET

    A.E. Abdikarimov, А. Yusupov, A. É. Atamuratov

    MaqolaSemiconductor materials and devicesTechnical Physics Letters20186 iqtibos
    ABI

  7. Influence of device geometry on electrical characteristics of a 10.7 nm SOI-FinFET

    A.E. Abdikarimov, Guillermo Indalecio, Enrique Comesaña +4

    MaqolaAdvancements in Semiconductor Devices and Circuit Design20145 iqtibos
    ABI

  8. Integrated modeling of Self-heating of confined geometry (FinFET, NWFET, and NSHFET) transistors and its implications for the reliability of sub-20 nm modern integrated circuits

    Woojin Ahn, SangHoon Shin, Chang‐Ming Jiang +3

    Maqola20185 iqtibos
    ABI

  9. Self-Consistent Simulation of Heating Effects in Nanoscale Devices

    Dragica Vasileska, Stephen M. Goodnick, Katerina Raleva

    Maqola20094 iqtibos
    ABI

  10. Multi-gate SOI MOSFETs

    J.-P. Colinge

    Maqola20073 iqtibos
    ABI

  11. Role of non-uniform channel doping in improving the nanoscale JL DG MOSFET reliability against the self-heating effects

    H. Ferhati, Fouzi Douak, F. Djeffal

    Maqola20173 iqtibos
    ABI

  12. Reduction of self-heating effect using selective buried oxide (SELBOX) charge plasma based junctionless transistor

    Amrish Kumar, Abhinav Gupta, Sanjeev Rai

    Maqola20183 iqtibos
    ABI

  13. Numerical study on the self-heating effects for vacuum/high-k gate dielectric tri-gate FinFETs

    Guohe Zhang, Junhua Lai, Shengli Zhu +3

    Maqola20193 iqtibos
    ABI

  14. Sarlavhasiz

    Boshqa2 iqtibos
    ABI