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15 ta ish

Ish: Effect of Compensation Degree and Concentration of Impurity Electroactive Selenium Atoms on Current Auto-Oscillation Parameters in Silicon

  1. Anomalous Photoelectric Phenomena in Silicon with Nanoclusters of Manganese Atoms

    М. К. Бахадырханов, С. Б. Исамов, Н. Ф. Зикриллаев +1

    MaqolaSemiconductor materials and interfacesSemiconductors202111 iqtibos
    ABI

  2. Functional Capabilities of Silicon with Nanoclusters of Manganese Atoms

    M. K. Bakhadirkhanov, С. Б. Исамов, Н. Ф. Зикриллаев +4

    MaqolaSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry202011 iqtibos
    ABI

  3. Some features of chemical interaction between a fast diffusing impurity and a group VI element in silicon

    M. K. Bakhadirkhanov, Sh. I. Askarov, Н. Норкулов

    MaqolaSilicon and Solar Cell Technologiesphysica status solidi (a)19949 iqtibos
    ABI

  4. Current-voltage behavior of silicon containing nanoclusters of manganese atoms

    М. К. Бахадырханов, С. Б. Исамов, Н. Ф. Зикриллаев

    MaqolaSilicon Nanostructures and PhotoluminescenceInorganic Materials20149 iqtibos
    ABI

  5. IR photodetectors in the range of λ = 1.5–8 μm, based on silicon with multicharged nanoclusters of manganese atoms

    М. К. Бахадырханов, С. Б. Исамов, Н. Ф. Зикриллаев

    MaqolaAdvanced Semiconductor Detectors and MaterialsRussian Microelectronics20127 iqtibos
    ABI

  6. Formation of complexes consisting of impurity Mn atoms and group VI elements in the crystal lattice of silicon

    К. А. Исмайлов, X. M. Iliev, M. O. Tursunov +1

    Maqola20215 iqtibos
    ABI

  7. Correlation between the material parameters and conditions for the excitation of recombination waves in Si〈;S〉

    М. К. Бахадырханов, U. Kh. Kurbanova, Н. Ф. Зикриллаев

    MaqolaSemiconductor materials and interfacesSemiconductors19995 iqtibos
    ABI

  8. Thermally stimulated currents and instabilities of the photoresponse in PbTe(In) alloys at low temperatures

    Б.А. Акимов, V. A. Bogoyavlenskii, L. I. Ryabova +2

    Maqola19995 iqtibos
    ABI

  9. Temperature-electrical domains moving in the cathode-anode direction in CdS monocrystals

    K. Germanova

    Maqola19733 iqtibos
    ABI

  10. Doping of silicon with selenium by diffusion from the gas phase

    Yu. A. Astrov, V. B. Shuman, L. М. Portsel +1

    Maqola20143 iqtibos
    ABI

  11. Formation of Se2 quasimolecules in selenium-doped silicon

    A. A. Taskin, E. G. Tishkovskiǐ

    Maqola19983 iqtibos
    ABI

  12. On several regularities of deep levels of d-impurities in silicon

    Marat S. Yunusov, A. Akhmadaliev, Б. Л. Оксенгендлер +1

    MaqolaSilicon and Solar Cell Technologiesphysica status solidi (a)19952 iqtibos
    ABI

  13. Control of the excitation conditions and the parameters of self-sustained oscillations of current in compensated silicon doped with manganese

    М. К. Бахадырханов, Kh. Azimkhuzhaev, Н. Ф. Зикриллаев +2

    MaqolaSilicon and Solar Cell TechnologiesSemiconductors20002 iqtibos
    ABI

  14. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  15. Investigation of current instabilities in Mn4Si7–Si:Mn–Mn4Si7 and Mn4Si7–Si:Mn–M heterojunctions

    T. S. Kamilov, L. L. Aksenova, B. Z. Sharipov +1

    MaqolaSemiconductor materials and interfacesSemiconductors20151 iqtibos
    ABI