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17 ta ish

Ish: Optimization of The Influence of Temperature on The Electrical Distribution of Structures with Radial p-n Junction Structures

  1. Factors Influencing the Ideality Factor of Semiconductor p-n and p-i-n Junction Structures at Cryogenic Temperatures

    Jo`shqin Abdullayev, I. B. Sapaev

    MaqolaOchiq kirishSemiconductor materials and interfacesEast European Journal of Physics202413 iqtibos
    ABI

  2. Analytic Analysis of the Features of GaAs/Si Radial Heterojunctions: Influence of Temperature and Concentration

    Jo`shqin Abdullayev, I. B. Sapaev

    MaqolaOchiq kirishAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics202513 iqtibos
    ABI

  3. Influence of Linear Doping Profiles on the Electrophysical Features of p-n Junctions

    Jo`shqin Abdullayev

    MaqolaOchiq kirishAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics202512 iqtibos
    ABI

  4. Theoretical analysis of incomplete ionization on the electrical behavior of radial <i>p-n</i> junction structures

    Jo`shqin Abdullayev, I. B. Sapaev, Kh. N. Juraev

    MaqolaSemiconductor Quantum Structures and DevicesLow Temperature Physics202510 iqtibos
    ABI

  5. Mathematical Analysis of the Features of Radial p-n Junction: Influence of Temperature and Concentration

    Jo`shqin Abdullayev, I. B. Sapaev, N.Sh. Esanmuradova +2

    MaqolaOchiq kirishAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics202510 iqtibos
    ABI

  6. The Role of Recombination Types in Efficiency Limits of Radial p n junctions based on Si and GaAs

    Jo`shqin Abdullayev, I. B. Sapaev, Sardor R. Kadirov

    MaqolaOchiq kirishAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics202510 iqtibos
    ABI

  7. Mathematical Modeling of Incomplete Ionization in Radial p-Si/n-GaAs Heterojunctions: Temperature and Doping Effects

    Jo`shqin Abdullayev, I. B. Sapaev, Jonibek Sh. Abdullayev +3

    MaqolaSemiconductor materials and interfacesJournal of Electronic Materials20257 iqtibos
    ABI

  8. Modeling of Optoelectronic Properties in pSi/n-CdmZn1−mS Heterojunctions: Effects of Composition and Temperature

    Jo`shqin Abdullayev, I. B. Sapaev, Sardor R. Kadirov +1

    MaqolaSemiconductor materials and interfacesJournal of Electronic Materials20256 iqtibos
    ABI

  9. Experimental and Simulation-Based Investigation of p-Si/n-CdS Heterojunctions: From Cryogenic Freeze-Out to Room Temperature Operation

    J. Sh. Abdullayev, D. A. Qalandarova, M. Sh. Ibragimova +2

    MaqolaSemiconductor materials and interfacesJournal of Electronic Materials20265 iqtibos
    ABI

  10. Impact of incomplete ionization on the critical electric field of <i>p</i> - <i>n</i> junction structures based on Si and GaAs

    J. Sh. Abdullayev, Dildora Qalandarova, M. Sh. Ibragimova

    MaqolaSilicon and Solar Cell TechnologiesLow Temperature Physics20264 iqtibos
    ABI

  11. Modeling and Theoretical Study of p-n Heterojunctions Based on CdTe/Si: Band Alignment, Carrier Transport, and Temperature-Dependent Electrophysical Properties

    S. Sadullaev, I. B. Sapaev, Khidoyat E. Abdikarimov

    MaqolaOchiq kirishAdvanced Semiconductor Detectors and MaterialsEast European Journal of Physics20253 iqtibos
    ABI

  12. Capacitance-voltage characteristics and electrostatic field distribution in CdTe/Si heterojunctions: temperature dependence and theoretical modeling

    I. B. Sapaev, S. Sadullaev

    MaqolaOchiq kirish20253 iqtibos
    ABI

  13. Temperature Response Curve of Silicon Diode Temperature Sensors

    Damir Istamov, O. A. Abdulkhaev, Shukurullo M. Kuliyev +3

    MaqolaOchiq kirishAdvanced MEMS and NEMS TechnologiesEast European Journal of Physics20251 iqtibos
    ABI

  14. Composition-Driven Band Engineering and Temperature Effects in pSi/nCdmZn1−mS Heterojunctions

    Jo`shqin Abdullayev, Jonibek Shakirovich Abdullayev, Ibrokhim Bayramdurdiyevich Sapaev +3

    MaqolaSemiconductor materials and interfacesJournal of Electronic Materials20261 iqtibos
    ABI

  15. Impacts of Local Oxide Trapped Charge on Electrical and Capacitance Characteristics of SOI FinFet

    A. É. Atamuratov, И. Н. Каримов, Mirzabahrom Foziljonov +3

    MaqolaOchiq kirishSemiconductor materials and devicesEast European Journal of Physics20250 iqtibos
    ABI

  16. A Systematic Analytical and Numerical Study of Incomplete Dopant Ionization in Germanium Over 4-400 K

    M.Sh. Ibragimova, D. A. Qalandarova, N.P. Babayazova +6

    MaqolaOchiq kirish20260 iqtibos
    ABI

  17. Incomplete Dopant Ionization Effects in GaN Optical Photovoltaic Converters Over 4–400 K for Space Solar Energy Applications

    D. A. Qalandarova, M.Sh. Ibragimova, U.G. Salayev +6

    MaqolaOchiq kirish20260 iqtibos
    ABI