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Ish: The Influence of γ-Irradiation on the Electrophysical Parameters of Nickel-Doped Silicon Grown by the Czochralski Method

  1. Influence of electrically neutral nickel atoms on electrical and recombination parameters of silicon

    М. К. Бахадырханов, B. K. Ismaylov, С. А. Тачилин +2

    MaqolaOchiq kirish202012 iqtibos
    ABI

  2. Clusters of nickel atoms and controlling their state in silicon lattice

    М. К. Бахадырханов

    MaqolaOchiq kirishSilicon Nanostructures and PhotoluminescenceSemiconductor Physics Quantum Electronics & Optoelectronics201811 iqtibos
    ABI

  3. Radiation Stability of Nickel Doped Solar Cells

    К. А. Исмайлов, Z. T. Kenzhaev, S. Koveshnikov +2

    MaqolaOchiq kirishSilicon and Solar Cell TechnologiesPhysics of the Solid State202210 iqtibos
    ABI

  4. Nickel solubility in intrinsic and doped silicon

    A. A. Istratov, P. Zhang, R. J. McDonald +6

    Maqola20047 iqtibos
    ABI

  5. Interaction of radiation defects with nickel atom clusters in silicon

    Х. М. Илиев, Z.M. Saparniyazova, К. А. Исмайлов +2

    MaqolaOchiq kirishGraphite, nuclear technology, radiation studiesSurface Engineering and Applied Electrochemistry20116 iqtibos
    ABI

  6. Effect of nickel on the lifetime of charge carriers in silicon solar cells

    Bakhadyrkhanov M.K., Kenzhaev Z.T., S. Koveshnikov +2

    MaqolaOchiq kirishSilicon and Solar Cell TechnologiesФизика и техника полупроводников20226 iqtibos
    ABI

  7. Transition metals in silicon

    Eicke R. Weber

    Maqola19835 iqtibos
    ABI

  8. Energy levels of vacancies and interstitial atoms in the band gap of silicon

    V. V. Lukjanitsa

    Maqola20035 iqtibos
    ABI

  9. Ti, Fe, and Ni in Si and their interactions with the vacancy and the<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>A</mml:mi></mml:math>center: A theoretical study

    D. J. Backlund, S. K. Estreicher

    Maqola20103 iqtibos
    ABI

  10. Thermal stability of electrical parameters of silicon crystal doped with nickel during growth

    M.K. Bakhadyrkhanov, Kanatbay A. Ismailov, E.Zh. Kosbergenov

    Maqola20223 iqtibos
    ABI

  11. The Elemental Composition Investigation of Silicon Doped with Gallium and Antimony Atoms

    Х. М. Илиев, S. Koveshnikov, B. O. Isakov +3

    MaqolaSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry20242 iqtibos
    ABI

  12. On the problem of Watkins substitution and migration of silicon atoms in silicon

    N. I. Berezhnov, A. R. Chelyadinskiĭ, M. Jadan +1

    Maqola19932 iqtibos
    ABI

  13. The Effect of Gamma Irradiation on the Electrophysical Parameters of Nickel-Doped Silicon Solar Cells

    Z. T. Kenzhaev, Х. М. Илиев, В. Б. Оджаев +6

    MaqolaSilicon and Solar Cell TechnologiesSurface Engineering and Applied Electrochemistry20241 iqtibos
    ABI

  14. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  15. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  16. ВЛИЯНИЕ γ-РАДИАЦИИ НА РЕКОМБИНАЦИОННЫЕ И ФОТОЭЛЕКТРИЧЕСКИЕ СВОЙСТВА КРЕМНИЯ, ЛЕГИРОВАННОГО НИКЕЛЕМ

    S.Z. Zainabidinov, А.О. Курбанов

    MaqolaOchiq kirish20181 iqtibos
    ABI