Ushbu ishga iqtibos qilgan ishlar

9 ta ish

Ish: Deep-level transient spectroscopy: A new method to characterize traps in semiconductors

1. The radiation-induced defects production in P-type silicon doped by impurities of transitional elements

   Marat S. Yunusov, M. Karimov, M. N. Alkulov +1

   MaqolaSilicon and Solar Cell TechnologiesRadiation effects and defects in solids20003 iqtibos

   ABIABI:AkademIndex/2026.other.279519

2. Capacitive Spectroscopy of Deep Levels in Silicon with Samarium Impurity

   Sharifa B. Utamuradova, Khojakbar S. Daliev, Shakhrukh Kh. Daliev +1

   MaqolaOAOchiq kirishSilicon and Solar Cell TechnologiesEast European Journal of Physics20232 iqtibos

   ABIABI:AkademIndex/2023.article.002748

3. Interaction of deep impurities with radiation defects in n-Si at γ-irradiation

   Sh. Makhkamov, M. Karimov, Z. M. Khakimov +4

   MaqolaSilicon and Solar Cell TechnologiesRadiation effects and defects in solids20052 iqtibos

   ABIABI:AkademIndex/2026.other.235254

4. Deep Level Transient Spectroscopy of Silicon, Doped by Zirconium

   Shakhrukh Kh. Daliev

   MaqolaOAOchiq kirishIon-surface interactions and analysisInternational Journal for Research in Applied Science and Engineering Technology20181 iqtibos

   ABIABI:AkademIndex/2018.article.000622

5. Influence of the Post-Diffusion Hardening Rate and Thermal Treatment on the Thermal Stability of the Charge-Carrier Lifetime in Overcompensated n-Si<B, S>

   M. Karimov, A. K. Karakhodzhaev

   MaqolaSemiconductor materials and interfacesRussian Physics Journal20010 iqtibos

   ABIABI:AkademIndex/2001.article.000182

6. The effect of thermal treatment on the charge-carrier lifetime in nickel-doped silicon

   M. Karimov, A. O. Kurbanov, С. З. Зайнабидинов +1

   MaqolaSilicon and Solar Cell TechnologiesRussian Physics Journal20060 iqtibos

   ABIABI:AkademIndex/2006.article.000333

7. Features of the Formation of Impurity-Defective Centers in Silicon Doped with Chromium

   Sharifa B. Utamuradova, Shakhrukh Kh. Daliev, Yuldoshali Ravshanov +30

   MaqolaOAOchiq kirishSilicon and Solar Cell TechnologiesInternational Journal of Emerging Trends in Engineering Research20200 iqtibos

   ABIABI:AkademIndex/2020.article.005153

8. EFFECT OF TEMPERATURE TREATMENT ON THE ENERGY SPECTRUM OF DEFECTS IN SILICON DOPED WITH MOLYBDENUM

   Kh.S. Daliev, Anifa Paluanova

   MaqolaOAOchiq kirishAdvanced Materials and Semiconductor TechnologiesEurasianUnionofScientists20210 iqtibos

   ABIABI:AkademIndex/2021.article.004364

9. Effect of Dysprosium Atoms Introduced During the Growth Phase on the Formation of Radiation Defects in Silicon Crystals

   Kh.S. Daliev, Sharifa B. Utamuradova, Shakhrukh Kh. Daliev +2

   MaqolaOAOchiq kirishSilicon and Solar Cell TechnologiesEast European Journal of Physics20250 iqtibos

   ABIABI:AkademIndex/2025.article.009030