Ushbu ish iqtibos qilgan ishlar

6 ta ish

Ish: Photoelectric and electrical properties of a reverse-biased p-Si/n-CdS/n +-CdS heterostructure

1. Physics of Semiconductor Devices

   J.-P. Colinge, Cindy Colinge

   Kitob200258 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.199260

2. Physics of Semiconductor Devices

   Simon M. Sze, Kwok K. Ng

   Kitob200633 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.109944

3. Injection photodiode based on an n-CdS/p-CdTe heterostructure

   Ш. А. Мирсагатов, R. R. Kabulov, M. A. Makhmudov

   MaqolaChalcogenide Semiconductor Thin FilmsSemiconductors201319 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.109943

4. I–V characteristic of p-n structures based on a continuous solid solutions (Si2)1 − xx (CdS) x

   А. С. Саидов, A. Yu. Leyderman, Sh. N. Usmonov +1

   MaqolaMaterial Science and ThermodynamicsSemiconductors200913 iqtibos

   ABIABI:AkademIndex/openalex/2009.article.000084

5. Injection photodiode based on p-CdTe film

   Ш. А. Мирсагатов, A.K. Uteniyazov

   MaqolaAdvanced Semiconductor Detectors and MaterialsTechnical Physics Letters201211 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.215221

6. Sarlavhasiz

   Boshqa1 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.385725