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7 ta ish

Ish: Effect of injection depletion in p-n heterostructures based on solid solutions (Si2)1 − x − y (Ge2) x (GaAs) y , (Si2)1 − x (CdS) x , (InSb)1 − x (Sn2) x , and CdTe1 − x S x

  1. Effect of Injection Depletion in p-Si–n-(Si2)1 –x(ZnSe)x (0 ≤ x ≤ 0.01) Heterostructure

    A.S. Saidov, A. Yu. Leyderman, Sh. N. Usmonov +1

    MaqolaSemiconductor materials and interfacesSemiconductors20184 iqtibos
    ABI

  2. Morphology and Current Transport in a Thin-Film Polycrystalline Au–ZnxCd1–xS–Mo Structure with Wide Photosensitivity Range in the Ultraviolet and Visible Radiation Spectral Region

    R. R. Kobulov, M. A. Makhmudov, S. Yu. Gerasimenko +1

    MaqolaChalcogenide Semiconductor Thin FilmsApplied Solar Energy20182 iqtibos
    ABI

  3. Peculiarities of the Current–Voltage Characteristic of n-GaP–p-(InSb)1 – x(Sn2)x Heterostructures

    A.S. Saidov, A. Yu. Leĭderman, Sh. N. Usmonov +1

    MaqolaSemiconductor materials and interfacesTechnical Physics Letters20201 iqtibos
    ABI

  4. Effect of Injection Phenomena on Electrical Properties of pSi--nSi1--xSnx Heterojunctions

    Kh. M. Madaminov

    MaqolaSemiconductor materials and interfacesHerald of the Bauman Moscow State Technical University Series Natural Sciences20211 iqtibos
    ABI

  5. Technology of fabrication of CDS<sub>X</sub>Te<sub>1-X</sub> solid solution on silicon substrate

    I.B. Sapaev, Б. Сапаев, D. Babajanov

    MaqolaChalcogenide Semiconductor Thin FilmsE3S Web of Conferences20230 iqtibos
    ABI

  6. Some electrical properties of p-Si–n-(Si2)1-y(GaN)y structures obtained by epitaxy of (Si2)1-y(GaN)y solid solutions on silicon substrates from liquid-phase

    A.S. Saidov, Shukrullo Usmonov, D. V. Saparov +4

    MaqolaGaN-based semiconductor devices and materialsAIP conference proceedings20240 iqtibos
    ABI

  7. Features of Growing a Solid Solution Si1−xGex (0 &lt; x &lt; 1) from a Liquid Phase

    Jamoliddin Razzokov

    BobSilicon and Solar Cell TechnologiesAdvances in Science, Technology & Innovation/Advances in science, technology & innovation20250 iqtibos
    ABI