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15 ta ish

Ish: Silicon Photovoltaic Cells with Deep p–n-Junction

  1. Optimal Conditions for Nickel Doping to Improve the Efficiency of Silicon Photoelectric Cells

    М. К. Бахадырханов, Z. T. Kenzhaev

    MaqolaSilicon and Solar Cell TechnologiesTechnical Physics20219 iqtibos
    ABI

  2. Clusters of impurity nickel atoms and their migration in the crystal lattice of silicon

    B. K. Ismaylov, N. F. Zikrillayev, К. А. Исмайлов +1

    MaqolaMaterial Science and ThermodynamicsPhysical Sciences and Technology20237 iqtibos
    ABI

  3. Optical Properties of GexSi1 – x Binary Compounds in Silicon

    Н. Ф. Зикриллаев, Habibjon Kushiev, Shahzodbek I. Hamrokulov +1

    MaqolaSemiconductor materials and interfacesJournal of Nano- and Electronic Physics20235 iqtibos
    ABI

  4. Gettering properties of nickel in silicon photocells

    Bakhadirkhanov M.K., Z. T. Kenzhaev, Turekeev Kh. S. +2

    MaqolaSemiconductor materials and interfacesЖурнал технической физики20224 iqtibos
    ABI

  5. Enhancing the Efficiency of Silicon Solar Cells through Nickel Doping

    Z. T. Kenzhaev, Н. Ф. Зикриллаев, K. S. Ayupov +3

    MaqolaSilicon and Solar Cell TechnologiesSurface Engineering and Applied Electrochemistry20234 iqtibos
    ABI

  6. The High-temperature analysis of silicon properties with manganese-oxygen binary complexes

    M. O. Tursunov, Khalmurat Iliev, B. K. Ismaylov

    MaqolaSemiconductor materials and interfacesPhysical Sciences and Technology20243 iqtibos
    ABI

  7. The Physical mechanisms of gettering properties of nickel clusters in silicon solar cells

    Zoir Kenjayev, Khalmurat Iliev, Kanatbay A. Ismailov +4

    MaqolaSilicon and Solar Cell TechnologiesPhysical Sciences and Technology20242 iqtibos
    ABI

  8. The Elemental Composition Investigation of Silicon Doped with Gallium and Antimony Atoms

    Х. М. Илиев, S. Koveshnikov, B. O. Isakov +3

    MaqolaSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry20242 iqtibos
    ABI

  9. Magnetic Properties of Silicon with Paramagnetic Impurity Atoms

    N. F. Zikrillayev, Г. Х. Мавлонов, Levent Trabzon +4

    MaqolaSemiconductor materials and interfacesEast European Journal of Physics20231 iqtibos
    ABI

  10. The Effect of Gamma Irradiation on the Electrophysical Parameters of Nickel-Doped Silicon Solar Cells

    Z. T. Kenzhaev, Х. М. Илиев, В. Б. Оджаев +6

    MaqolaSilicon and Solar Cell TechnologiesSurface Engineering and Applied Electrochemistry20241 iqtibos
    ABI

  11. Improving the efficiency of an industrial silicon solar cell by doping with nickel

    M. K. Bakhadirkhanov, Z. T. Kenzhaev, B. K. Ismaylov +3

    MaqolaChalcogenide Semiconductor Thin FilmsJournal of the Belarusian State University Physics20210 iqtibos
    ABI

  12. Investigation of Some Properties of Nickel Germanosilicides Formed on the Surface of Bulk Si1 – xGex Crystals

    N. A. Matchanov, K. A. Bobojonov

    MaqolaSemiconductor materials and interfacesApplied Solar Energy20220 iqtibos
    ABI

  13. Tracking maximum power point of photovoltaic modules

    Elyor Saitov, U. M. Akhmedov

    MaqolaPhotovoltaic System Optimization TechniquesAIP conference proceedings20230 iqtibos
    ABI

  14. Influence of Nickel Impurity on the Operating Parameters of a Silicon Solar Cell

    Z. T. Kenzhaev, Н. Ф. Зикриллаев, В. Б. Оджаев +4

    MaqolaSilicon and Solar Cell TechnologiesRussian Microelectronics20240 iqtibos
    ABI

  15. Photovoltaic Cells Based on Silicon with Binary Compounds GexSi1–x

    Н. Ф. Зикриллаев, Kh. F. Zikrillaev, F. E. Urakova +4

    MaqolaSilicon and Solar Cell TechnologiesSurface Engineering and Applied Electrochemistry20250 iqtibos
    ABI