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Ушбу ишга иқтибос қилган ишлар

15 та иш

Иш: Silicon Photovoltaic Cells with Deep p–n-Junction

  1. Optimal Conditions for Nickel Doping to Improve the Efficiency of Silicon Photoelectric Cells

    М. К. Бахадырханов, Z. T. Kenzhaev

    МақолаSilicon and Solar Cell TechnologiesTechnical Physics20219 иқтибос
    ABI

  2. Clusters of impurity nickel atoms and their migration in the crystal lattice of silicon

    B. K. Ismaylov, N. F. Zikrillayev, К. А. Исмайлов +1

    МақолаMaterial Science and ThermodynamicsPhysical Sciences and Technology20237 иқтибос
    ABI

  3. Optical Properties of GexSi1 – x Binary Compounds in Silicon

    Н. Ф. Зикриллаев, Habibjon Kushiev, Shahzodbek I. Hamrokulov +1

    МақолаSemiconductor materials and interfacesJournal of Nano- and Electronic Physics20235 иқтибос
    ABI

  4. Gettering properties of nickel in silicon photocells

    Bakhadirkhanov M.K., Z. T. Kenzhaev, Turekeev Kh. S. +2

    МақолаSemiconductor materials and interfacesЖурнал технической физики20224 иқтибос
    ABI

  5. Enhancing the Efficiency of Silicon Solar Cells through Nickel Doping

    Z. T. Kenzhaev, Н. Ф. Зикриллаев, K. S. Ayupov +3

    МақолаSilicon and Solar Cell TechnologiesSurface Engineering and Applied Electrochemistry20234 иқтибос
    ABI

  6. The High-temperature analysis of silicon properties with manganese-oxygen binary complexes

    M. O. Tursunov, Khalmurat Iliev, B. K. Ismaylov

    МақолаSemiconductor materials and interfacesPhysical Sciences and Technology20243 иқтибос
    ABI

  7. The Physical mechanisms of gettering properties of nickel clusters in silicon solar cells

    Zoir Kenjayev, Khalmurat Iliev, Kanatbay A. Ismailov +4

    МақолаSilicon and Solar Cell TechnologiesPhysical Sciences and Technology20242 иқтибос
    ABI

  8. The Elemental Composition Investigation of Silicon Doped with Gallium and Antimony Atoms

    Х. М. Илиев, S. Koveshnikov, B. O. Isakov +3

    МақолаSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry20242 иқтибос
    ABI

  9. Magnetic Properties of Silicon with Paramagnetic Impurity Atoms

    N. F. Zikrillayev, Г. Х. Мавлонов, Levent Trabzon +4

    МақолаSemiconductor materials and interfacesEast European Journal of Physics20231 иқтибос
    ABI

  10. The Effect of Gamma Irradiation on the Electrophysical Parameters of Nickel-Doped Silicon Solar Cells

    Z. T. Kenzhaev, Х. М. Илиев, В. Б. Оджаев +6

    МақолаSilicon and Solar Cell TechnologiesSurface Engineering and Applied Electrochemistry20241 иқтибос
    ABI

  11. Improving the efficiency of an industrial silicon solar cell by doping with nickel

    M. K. Bakhadirkhanov, Z. T. Kenzhaev, B. K. Ismaylov +3

    МақолаChalcogenide Semiconductor Thin FilmsJournal of the Belarusian State University Physics20210 иқтибос
    ABI

  12. Investigation of Some Properties of Nickel Germanosilicides Formed on the Surface of Bulk Si1 – xGex Crystals

    N. A. Matchanov, K. A. Bobojonov

    МақолаSemiconductor materials and interfacesApplied Solar Energy20220 иқтибос
    ABI

  13. Tracking maximum power point of photovoltaic modules

    Elyor Saitov, U. M. Akhmedov

    МақолаPhotovoltaic System Optimization TechniquesAIP conference proceedings20230 иқтибос
    ABI

  14. Influence of Nickel Impurity on the Operating Parameters of a Silicon Solar Cell

    Z. T. Kenzhaev, Н. Ф. Зикриллаев, В. Б. Оджаев +4

    МақолаSilicon and Solar Cell TechnologiesRussian Microelectronics20240 иқтибос
    ABI

  15. Photovoltaic Cells Based on Silicon with Binary Compounds GexSi1–x

    Н. Ф. Зикриллаев, Kh. F. Zikrillaev, F. E. Urakova +4

    МақолаSilicon and Solar Cell TechnologiesSurface Engineering and Applied Electrochemistry20250 иқтибос
    ABI