Ushbu ish iqtibos qilgan ishlar

26 ta ish

Ish: Influence of Microwave and Magnetic Fields on the Electrophysical Parameters of a Tunnel Diode

On the tensosensitivity of a p-n junction under illumination
G. Gulyamov, A. G. Gulyamov
MaqolaOptical Polarization and EllipsometrySemiconductors201510 iqtibos
ABI
Calculation of the Total Current Generated in a Tunnel Diode Under the Action of Microwave and Magnetic Fields
G. Gulyamov, Sharifa B. Utamuradova, Mukhamadjon G. Dadamirzaev +5
MaqolaSemiconductor Quantum Structures and DevicesEast European Journal of Physics20235 iqtibos
ABI
The multivalued current–voltage characteristics in the tunnel diodes
К. М. Алиев, И. К. Камилов, Kh. O. Ibragimov +1
Maqola20083 iqtibos
ABI
Excess Tunnel Current in Silicon Esaki Junctions
A. G. Chynoweth, W. L. Feldmann, R. A. Logan
Maqola19613 iqtibos
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431 kA/cm2 peak tunneling current density in GaN/AlN resonant tunneling diodes
Tyler A. Growden, Weidong Zhang, E. R. Brown +5
Maqola20183 iqtibos
ABI
Tunnel junction <i>I</i>(<i>V</i>) characteristics: Review and a new model for p-n homojunctions
Nelly Moulin, Mohamed Amara, Fabien Mandorlo +1
Sharh maqola20193 iqtibos
ABI
The effect of a heated electron on the VAX of a tunnel diode
G. Gulyamov, M. G. Dadamirzayev, K. M. Uktamova +1
MaqolaGaN-based semiconductor devices and materialsAIP conference proceedings20232 iqtibos
ABI
Negative Differential Resistance Devices and Circuits
Paul R. Berger, A. Ramesh
Bob20112 iqtibos
ABI
N-type negative differential resistance, hysteresis, and oscillations in the current-voltage characteristics of microwave diodes
К. М. Алиев, И. К. Камилов, Kh. O. Ibragimov +1
Maqola20122 iqtibos
ABI
Stepwise current oscillations in tunnel and high-frequency semiconductor diodes
К. М. Алиев, И. К. Камилов, Kh. O. Ibragimov +1
Maqola20112 iqtibos
ABI
Absolute negative resistance and multivaluedness on current-voltage characteristics of tunnel diodes
К. М. Алиев, И. К. Камилов, Kh. O. Ibragimov +1
Maqola20092 iqtibos
ABI
Power Conversion Enhancement of CdS/CdTe Solar Cell Interconnected with Tunnel Diode
Wagah F. Mohammed, Omar Daoud, M.N. Al-Tikriti
Maqola20122 iqtibos
ABI
151 kA/cm 2 peak current densities in Si/SiGe resonant interband tunneling diodes for high-power mixed-signal applications
Niu Jin, Sung-Yong Chung, Anthony T. Rice +4
Maqola20032 iqtibos
ABI
Conditions for negative differential resistance and switching in a tunnel diode under the effect of an external microwave signal
Д. А. Усанов, А. В. Скрипаль, N. V. Ugryumova +2
Maqola20002 iqtibos
ABI
Simple Method for Calculating the Tunneling Current of an Esaki Diode
J. Karlovský
Maqola19622 iqtibos
ABI
Sarlavhasiz
Boshqa2 iqtibos
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Microwave properties of silicon junction tunnel diodes grown by molecular beam epitaxy
M. W. Dashiell, J. Kolodzey, P. Crozat +2
Maqola20022 iqtibos
ABI
930 kA/cm2 peak tunneling current density in GaN/AlN resonant tunneling diodes grown on MOCVD GaN-on-sapphire template
Tyler A. Growden, Evan M. Cornuelle, David F. Storm +7
Maqola20192 iqtibos
ABI
Change in the quasi-Fermi level and current - Voltage characteristics of diodes with a p-n junction under the action of light and deformation
G. Gulyamov, Bahodir Shahobiddinov, Alisher Z. Soliyev +2
MaqolaSemiconductor materials and interfacesAIP conference proceedings20232 iqtibos
ABI
Sarlavhasiz
Boshqa1 iqtibos
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Sarlavhasiz
Boshqa1 iqtibos
ABI
Sarlavhasiz
Boshqa1 iqtibos
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Sarlavhasiz
Boshqa1 iqtibos
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Sarlavhasiz
Boshqa1 iqtibos
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Sarlavhasiz
Boshqa1 iqtibos
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