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15 ta ish

Ish: The Prospects of Obtaining a New Material with a Hetero-Baric Structure Gexsi1 – x-Si Based on Silicon for Photo Energy Applications

  1. SPECTRAL DEPENDENCE OF THE PHOTOCONDUCTIVITY OF GеxSi1 – x TYPE GRADED-GAP STRUCTURES OBTAINED BY DIFFUSION TECHNOLOGY

    Н. Ф. Зикриллаев, S. Koveshnikov, С. Б. Исамов +2

    MaqolaSemiconductor materials and interfacesSemiconductors20228 iqtibos
    ABI

  2. Current Status of Silicon Studies with GexSi1-x Binary Compounds and Possibilities of Their Applications in Electronics

    Н. Ф. Зикриллаев, G. A. Kushiev, Sergey V. Koveshnikov +3

    MaqolaSemiconductor materials and interfacesEast European Journal of Physics20238 iqtibos
    ABI

  3. A Surface Study of Si Doped Simultaneously with Ga and Sb

    X.M. Iliyev, Sobir B. Isamov, B. O. Isakov +2

    MaqolaSemiconductor Quantum Structures and DevicesEast European Journal of Physics20237 iqtibos
    ABI

  4. The effect of silicon-germanium microheterojunctions on the parameters of silicon solar cells

    Б. А. Абдурахманов, Х. М. Илиев, С. А. Тачилин +2

    MaqolaSilicon and Solar Cell TechnologiesSurface Engineering and Applied Electrochemistry20107 iqtibos
    ABI

  5. Photovoltaic Properties of Silicon Doped with Manganese and Germanium

    Н. Ф. Зикриллаев, Habibjon Kushiev, С. Б. Исамов +2

    Maqola20237 iqtibos
    ABI

  6. X-Ray Diffraction and Raman Spectroscopy Analyses of GaSb-Enriched Si Surface Formed by Applying Diffusion Doping Technique

    Xalmurat M. Iliyev, В. Б. Оджаев, Sobir B. Isamov +5

    MaqolaSilicon Nanostructures and PhotoluminescenceEast European Journal of Physics20236 iqtibos
    ABI

  7. Magnetic Properties of Silicon Doped with Impurity Atoms of Europium

    Н. Ф. Зикриллаев, G. H. Mavlonov, Levent Trabzon +4

    MaqolaMagnetic properties of thin filmsJournal of Nano- and Electronic Physics20235 iqtibos
    ABI

  8. Development and Creation of a New Class of Graded-Gap Structures Based on Silicon with the Participation of Zn and Se Atoms

    Н. Ф. Зикриллаев, O. B. Tursunov, G. A. Kushiev

    MaqolaSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry20235 iqtibos
    ABI

  9. Optical Properties of GexSi1 – x Binary Compounds in Silicon

    Н. Ф. Зикриллаев, Habibjon Kushiev, Shahzodbek I. Hamrokulov +1

    MaqolaSemiconductor materials and interfacesJournal of Nano- and Electronic Physics20235 iqtibos
    ABI

  10. Sarlavhasiz

    Boshqa4 iqtibos
    ABI

  11. The thermoelectric effect in a graded-gap nSi–pSi1–x Ge x heterostructure

    A. Yu. Leĭderman, A.S. Saidov, A. B. Karshiev

    MaqolaMaterial Science and ThermodynamicsApplied Solar Energy20164 iqtibos
    ABI

  12. Review and perspective of materials for flexible solar cells

    Xiaoyue Li, Peicheng Li, Zhongbin Wu +3

    Maqola20202 iqtibos
    ABI

  13. Synergistic Effects of Ge and Si on the Performances and Mechanism of the Ge<sub><i>x</i></sub>Si<sub>1–<i>x</i></sub> Electrodes for Li Ion Batteries

    D. Duveau, Bernard Fraisse, Frédérique Cunin +1

    Maqola20152 iqtibos
    ABI

  14. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  15. Sarlavhasiz

    Boshqa1 iqtibos
    ABI