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28 ta ish

Ish: Structural Features of the Epitaxial Layer of the (GaAs)<sub>1−</sub><i><sub>y</sub></i><sub>−</sub><i><sub>z</sub></i>(Ge<sub>2</sub>)<i><sub>y</sub></i>(ZnSe)<i><sub>z</sub></i> Solid Solution Grown from a Bismuth Solution Melt

  1. Structural and some electrophysical properties of the solid solutions Si1 − x Sn x (0 ≤ x ≤ 0.04)

    A.S. Saidov, Sh. N. Usmonov, M. U. Kalanov +2

    MaqolaAdvanced Surface Polishing TechniquesPhysics of the Solid State20138 iqtibos
    ABI

  2. Possibility of obtaining the (GaSb)1 − x (Si2) x films on silicon substrates by the method of liquid-phase epitaxy

    Sh. N. Usmonov, A.S. Saidov, A. Yu. Leyderman +2

    MaqolaSemiconductor materials and interfacesSemiconductors20098 iqtibos
    ABI

  3. Growth of Ge1 − x Sn x solid solution films and study of their structural properties and some of their photoelectric properties

    A.S. Saidov, Sh. N. Usmonov, U. P. Asatova

    MaqolaPhotonic and Optical DevicesSemiconductors20124 iqtibos
    ABI

  4. Studies of the crystal structure of solid solutions (Sn2)1−x−y(GaAs)x(ZnSe)y, (GaAs)1−x(ZnSe)x grown from liquid phase

    A. Sh. Razzokov, A.S. Saidov, B. Allabergenov +3

    MaqolaChalcogenide Semiconductor Thin FilmsJournal of Crystal Growth20232 iqtibos
    ABI

  5. Single crystal preparation and properties of the AgGaGeS4–AgGaGe3Se8 solid solution

    М. В. Шевчук, Victor V. Atuchin∥⊥, A.V. Kityk +5

    Maqola20102 iqtibos
    ABI

  6. Low Leakage-Current InAsSb Nanowire Photodetectors on Silicon

    Michael D. Thompson, Aiyeshah Alhodaib, Adam P. Craig +7

    Maqola20152 iqtibos
    ABI

  7. Band-gap tailoring and visible-light-driven photocatalytic performance of porous (GaN)<sub>1−x</sub>(ZnO)<sub>x</sub>solid solution

    Aimin Wu, Jing Li, Baodan Liu +6

    Maqola20172 iqtibos
    ABI

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