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45 ta ish

Ish: Composition-Driven Band Engineering and Temperature Effects in pSi/nCdmZn1−mS Heterojunctions

  1. Optimization of The Influence of Temperature on The Electrical Distribution of Structures with Radial p-n Junction Structures

    Jo`shqin Abdullayev, I. B. Sapaev

    MaqolaAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics202414 iqtibos
    ABI

  2. OPTIMIZING THE INFLUENCE OF DOPING AND TEMPERATURE ON THE ELECTROPHYSICAL FEATURES OF P-N AND P-I-N JUNCTION STRUCTURES

    Jo`shqin Abdullayev, I. B. Sapaev

    Maqola202413 iqtibos
    ABI

  3. Surface-Potential-Based Drain Current Analytical Model for Triple-Gate Junctionless Nanowire Transistors

    Renan Trevisoli, Rodrigo T. Doria, Michelly de Souza +3

    Maqola201211 iqtibos
    ABI

  4. An Explicit Quantum-Mechanical Compact Model for the <italic>I-V</italic> Characteristics of Cylindrical Nanowire MOSFETs

    Regiane Ragi, Rafael Nobrega, Ulysses Rondina Duarte +1

    Maqola201611 iqtibos
    ABI

  5. Factors Influencing the Ideality Factor of Semiconductor p-n and p-i-n Junction Structures at Cryogenic Temperatures

    Jo`shqin Abdullayev, I. B. Sapaev

    MaqolaSemiconductor materials and interfacesEast European Journal of Physics202410 iqtibos
    ABI

  6. GaN nanowire ultraviolet photodetector with a graphene transparent contact

    A. V. Babichev, H. Zhang, Pierre Lavenus +5

    Maqola201310 iqtibos
    ABI

  7. Fabrication and studies on Si/InP core-shell nanowire based solar cell using etched Si nanowire arrays

    Biswajit Pal, Kalyan Jyoti Sarkar, P. Banerji

    Maqola201910 iqtibos
    ABI

  8. Influence of the parameters to transition capacitance at NCDS-PSI heterostructure

    I.B. Sapaev, Б. Сапаев, Diyorjon Àbdullaev +5

    MaqolaChalcogenide Semiconductor Thin FilmsE3S Web of Conferences20239 iqtibos
    ABI

  9. Modeling and calibration of electrical features of p-n junctions based on Si and GaAs

    Jo`shqin Abdullayev, I. B. Sapaev

    MaqolaSemiconductor materials and interfacesPhysical Sciences and Technology20249 iqtibos
    ABI

  10. Theoretical analysis of incomplete ionization on the electrical behavior of radial <i>p-n</i> junction structures

    Jo`shqin Abdullayev, I. B. Sapaev, Kh. N. Juraev

    MaqolaSemiconductor Quantum Structures and DevicesLow Temperature Physics20259 iqtibos
    ABI

  11. Efficient photogeneration of charge carriers in silicon nanowires with a radial doping gradient

    Dharmapura H. K. Murthy, Tao Xu, Wanghua Chen +11

    Maqola20119 iqtibos
    ABI

  12. Improvement of carrier ballisticity in junctionless nanowire transistors

    Nima Dehdashti Akhavan, Isabelle Ferain, Pedram Razavi +2

    Maqola20119 iqtibos
    ABI

  13. A GaAs Nanowire Array Solar Cell With 15.3% Efficiency at 1 Sun

    Ingvar Åberg, Giuliano Vescovi, Damir Asoli +8

    Maqola20159 iqtibos
    ABI

  14. Analytic Analysis of the Features of GaAs/Si Radial Heterojunctions: Influence of Temperature and Concentration

    Jo`shqin Abdullayev, I. B. Sapaev

    MaqolaAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics20257 iqtibos
    ABI

  15. Influence of Linear Doping Profiles on the Electrophysical Features of p-n Junctions

    Jo`shqin Abdullayev

    MaqolaAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics20257 iqtibos
    ABI

  16. Optical and electrical modeling of solar cells based on graphene/Si nanowires with radial p–i–n junctions

    Zahra Arefinia, Asghar Asgari

    Maqola20157 iqtibos
    ABI

  17. Potential distribution over temperature sensors of p-n junction diodes with arbitrary doping of the base region

    R. R. Bebitov, O. A. Abdulkhaev, D. M. Yodgorova +6

    MaqolaAdvanced Semiconductor Detectors and MaterialsE3S Web of Conferences20236 iqtibos
    ABI

  18. High efficiency silicon solar cell based on asymmetric nanowire

    Myung-Dong Ko, Taiuk Rim, Ki‐Hyun Kim +2

    Maqola20156 iqtibos
    ABI

  19. Analytical modelling and device design optimisation of epitaxial layer‐based III–V tunnel FET

    Prabhat Kumar Dubey, Brajesh Kumar Kaushik, Eddy Simoen

    Maqola20196 iqtibos
    ABI

  20. Fully analytical compact model for the Q–V and C–V characteristics of cylindrical junctionless nanowire FETs

    Adelcio M. de Souza, Daniel R. Celino, Regiane Ragi +1

    Maqola20216 iqtibos
    ABI

  21. ENHANCEMENT OF POWER CONVERSION EFFICIENCY OF DYE-SENSITIZED SOLAR CELLS VIA INCORPORATION OF GAN SEMICONDUCTOR MATERIAL SYNTHESIZED IN HOT-WALL CHEMICAL VAPOR DEPOSITION FURNACE

    Olzat Toktarbaiuly

    Maqola20246 iqtibos
    ABI

  22. Mathematical Analysis of the Features of Radial p-n Junction: Influence of Temperature and Concentration

    Jo`shqin Abdullayev, I. B. Sapaev, N.Sh. Esanmuradova +2

    MaqolaAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics20255 iqtibos
    ABI

  23. The Role of Recombination Types in Efficiency Limits of Radial p n junctions based on Si and GaAs

    Jo`shqin Abdullayev, I. B. Sapaev, Sardor R. Kadirov

    MaqolaAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics20255 iqtibos
    ABI

  24. Holomorphic continuation into a matrix ball of functions defined on a piece of its skeleton

    G. Khudayberganov, Jonibek Sh. Abdullayev

    MaqolaHolomorphic and Operator TheoryVestnik Udmurtskogo Universiteta Matematika Mekhanika Komp yuternye Nauki20214 iqtibos
    ABI

  25. Synthesis and Characterization of CdS, ZnS and CdZnS Nanoparticles Embedded in Polystyrene

    Olumide Oluwole Akinwunmi, Gabriel O. Egharevba, E.O.B. Ajayi

    Maqola20144 iqtibos
    ABI