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15 ta ish

Ish: Liquid-phase epitaxy of the (Si2)1 − x − y (Ge2) x (GaAs) y substitutional solid solution (0 ≤ x ≤ 0.91, 0 ≤ y ≤ 0.94) and their electrophysical properties

  1. Constitution of Binary Alloys

    Max Hansen, K. Anderko, H. W. Salzberg

    Maqola195826 iqtibos
    ABI

  2. Growth of (InSb)1 − x (Sn2) x films on GaAs substrates by liquid-phase epitaxy

    A.S. Saidov, М. С. Саидов, Sh. N. Usmonov +1

    MaqolaSemiconductor Quantum Structures and DevicesSemiconductors20109 iqtibos
    ABI

  3. Structural and some electrophysical properties of the solid solutions Si1 − x Sn x (0 ≤ x ≤ 0.04)

    A.S. Saidov, Sh. N. Usmonov, M. U. Kalanov +2

    MaqolaAdvanced Surface Polishing TechniquesPhysics of the Solid State20138 iqtibos
    ABI

  4. Growth of (GaAs)1 − x (ZnSe) x solid solution films and investigation of their structural and some photoelectric properties

    A.S. Saidov, М. С. Саидов, Sh. N. Usmonov +4

    MaqolaChalcogenide Semiconductor Thin FilmsPhysics of the Solid State20118 iqtibos
    ABI

  5. Possibility of obtaining the (GaSb)1 − x (Si2) x films on silicon substrates by the method of liquid-phase epitaxy

    Sh. N. Usmonov, A.S. Saidov, A. Yu. Leyderman +2

    MaqolaSemiconductor materials and interfacesSemiconductors20098 iqtibos
    ABI

  6. Sarlavhasiz

    Boshqa7 iqtibos
    ABI

  7. Growth of GaInAsSb Alloys by MOCVD and Characterization of GaInAsSb / GaSb p‐n Photodiodes

    G. Bougnot, F. Delannoy, A. Foucaran +4

    Maqola19884 iqtibos
    ABI

  8. Growth of Ge1 − x Sn x solid solution films and study of their structural properties and some of their photoelectric properties

    A.S. Saidov, Sh. N. Usmonov, U. P. Asatova

    MaqolaPhotonic and Optical DevicesSemiconductors20124 iqtibos
    ABI

  9. Surfactant-mediated growth of Si 1-x Sn x layers by molecular-beam epitaxy

    M. F. Fyhn, J. Lundsgaard Hansen, J. Chevallier +1

    Maqola19993 iqtibos
    ABI

  10. Direct energy gap group IV semiconductor alloys and quantum dot arrays in SnxGe1−x/Ge and SnxSi1−x/Si alloy systems

    Regina Ragan, Kyu Sung Min, Harry A. Atwater

    Maqola20013 iqtibos
    ABI

  11. Synthesis and characterization of (Si2)1−x−y (Ge2) x (GaAs) y continuous solid solutions

    A.S. Saidov, Sh. N. Usmonov, Khomidkhodzha Kholikov +1

    MaqolaSemiconductor materials and interfacesTechnical Physics Letters20073 iqtibos
    ABI

  12. IR spectroscopy of lattice vibrations and comparative analysis of the ZnTe/CdTe quantum-dot superlattices on the GaAs substrate and with the ZnTe and CdTe buffer layers

    S. P. Kozyrev

    Maqola20093 iqtibos
    ABI

  13. The Application of Scanning Tunneling Microscopy to In Situ Studies of Nickel Electrodes under Potential Control

    Ovadia Lev, Fu‐Ren F. Fan, Allen J. Bard

    Maqola19883 iqtibos
    ABI

  14. Characterization of Ge-on-Si virtual substrates and single junction GaAs solar cells

    R. Ginige, Brian Corbett, M. Modreanu +5

    Maqola20062 iqtibos
    ABI

  15. Monolithic CMOS-compatible AlGaInP visible LED arrays on silicon on lattice-engineered substrates (SOLES)

    Kamesh Chilukuri, M. Mori, Carl L. Dohrman +1

    Maqola20062 iqtibos
    ABI