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8 ta ish

Ish: Diffusion and Electroluminescence Studies of Low Temperature Diffusion of Boron in 3C-SiC

  1. Nonequilibrium Diffusion of Boron in SiC at Low Temperatures

    Iikham G. Atabaev, Tojiddin M. Saliev, É. N. Bakhranov +6

    MaqolaSilicon Carbide Semiconductor TechnologiesMaterials Sciences and Applications20105 iqtibos
    ABI

  2. Negative secondary ion mass spectra under Cs+ ion bombardment of the p-SiC-〈B〉-surface

    I. G. Atabaev, Timur Saliev, Б.Г. Атабаев +1

    MaqolaIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20114 iqtibos
    ABI

  3. Fast Switching 4<i>H</i>-SiC<i> P-i-n</i> Structures Fabricated by Low Temperature Diffusion of Al

    I. G. Atabaev, Kh. N. Juraev, V. A. Pak

    MaqolaSilicon Carbide Semiconductor TechnologiesAdvances in Condensed Matter Physics20174 iqtibos
    ABI

  4. Research of <i>p</i>‐<i>i</i>‐<i>n</i> Junctions Based on 4<i>H</i>‐SiC Fabricated by Low‐Temperature Diffusion of Boron

    I. G. Atabaev, Kh. N. Juraev

    MaqolaSilicon Carbide Semiconductor TechnologiesAdvances in Materials Science and Engineering20182 iqtibos
    ABI

  5. Activation Energy of the Conductance of p–n-4H-SiC 〈Al〉 Structures Doped with Aluminum by the Method of Low-Temperature Diffusion

    Kh. N. Zhuraev, А. Yusupov, A. G. Gulyamov +3

    MaqolaSilicon Carbide Semiconductor TechnologiesJournal of Engineering Physics and Thermophysics20201 iqtibos
    ABI

  6. The Effect of Atmospheric Oxide Thermodesorption on Negative-Ion Atomic and Cluster Sputtering of Silicon Single Crystal by Cesium Ions

    Б.Г. Атабаев, R. Djabbarganov, A. S. Khalmatov +2

    MaqolaIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20240 iqtibos
    ABI

  7. The effect of atmospheric oxide thermodesorption on negative-ion atomic and cluster sputtering of silicon single crystal by cesium ions

    Б.Г. Атабаев, R. Djabbarganov, A. S. Khalmatov +2

    MaqolaIon-surface interactions and analysisПоверхность Рентгеновские синхротронные и нейтронные исследования20240 iqtibos
    ABI

  8. Photoluminescence Spectra of Stacking Defects in 4H-SiC Crystals

    Б.Г. Атабаев, Kh. N. Juraev, Z. Sh. Shaymardanov +2

    MaqolaSilicon Carbide Semiconductor TechnologiesJournal of Applied Spectroscopy20250 iqtibos
    ABI