Ushbu ishga iqtibos qilgan ishlar

2 ta ish

Ish: Electron-Hole Recombination in Germanium

1. Effect of different chemical treatments of surface on the height of Al-p-SiGe and Au-n-SiGe barriers

   I. G. Atabaev, N. A. Matchanov, M. U. Hajiev +2

   MaqolaSemiconductor materials and devicesSemiconductors20100 iqtibos

   ABIABI:AkademIndex/openalex/2010.article.000173

2. Effect of surface chemical treatments on Ti-p-Si1 − x Gex and Ni-p-Si1 − x Ge x contact properties

   I. G. Atabaev, M. U. Hajiev, N. A. Matchanov +2

   MaqolaSemiconductor materials and interfacesSemiconductors20100 iqtibos

   ABIABI:AkademIndex/openalex/2010.article.000362