Ushbu ishga iqtibos qilgan ishlar

3 ta ish

Ish: RTN distribution comparison for bulk, FDSOI and FinFETs devices

1. The Influence of Fin Shape on the Amplitude of Random Telegraph Noise in the Subthreshold Regime of a Junctionless FinFET

   M. M. Khalilloev, B. O. Jabbarova, Aslan Nasirov

   MaqolaAdvancements in Semiconductor Devices and Circuit DesignTechnical Physics Letters20192 iqtibos

   ABIABI:AkademIndex/openalex/2019.article.000603

2. Contribution to the Physical Modelling of Single Charged Defects Causing the Random Telegraph Noise in Junctionless FinFET

   A. É. Atamuratov, M. M. Khalilloev, Ahmed Yusupov +3

   MaqolaSemiconductor materials and devicesApplied Sciences20202 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.541488

3. The Influence of a Single Charged Interface Trap on the Subthreshold Drain Current in FinFETs with Different Fin Shapes

   A.E. Abdikarimov

   MaqolaAdvancements in Semiconductor Devices and Circuit DesignTechnical Physics Letters20201 iqtibos

   ABIABI:AkademIndex/openalex/2020.article.001438