Ushbu ishga iqtibos qilgan ishlar

3 ta ish

Ish: Characterising lateral capacitance of MNOSFET with localised trapped charge in nitride layer

1. The Influence of Fin Shape on the Amplitude of Random Telegraph Noise in the Subthreshold Regime of a Junctionless FinFET

   M. M. Khalilloev, B. O. Jabbarova, Aslan Nasirov

   MaqolaAdvancements in Semiconductor Devices and Circuit DesignTechnical Physics Letters20192 iqtibos

   ABIABI:AkademIndex/openalex/2019.article.000603

2. The Influence of a Single Charged Interface Trap on the Subthreshold Drain Current in FinFETs with Different Fin Shapes

   A.E. Abdikarimov

   MaqolaAdvancements in Semiconductor Devices and Circuit DesignTechnical Physics Letters20201 iqtibos

   ABIABI:AkademIndex/openalex/2020.article.001438

3. Capacitance Method for Identifying Degradation due to Electrical Stress in MOSFETs

   Zamira Atamuratova, Ahmed Yusupov, Jean Chamberlain Chedjou +1

   MaqolaSemiconductor materials and devicese-Journal of Surface Science and Nanotechnology20220 iqtibos

   ABIABI:AkademIndex/openalex/2022.article.006400