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8 works

Work: Structural and some electrophysical properties of the solid solutions Si1 − x Sn x (0 ≤ x ≤ 0.04)

  1. Effect of injection depletion in p-n heterostructures based on solid solutions (Si2)1 − x − y (Ge2) x (GaAs) y , (Si2)1 − x (CdS) x , (InSb)1 − x (Sn2) x , and CdTe1 − x S x

    Sh. N. Usmonov, А. С. Саидов, A. Yu. Leĭderman

    ArticleNear-Field Optical MicroscopyPhysics of the Solid State20147 citations
    ABI

  2. Effect of Injection Depletion in p-Si–n-(Si2)1 –x(ZnSe)x (0 ≤ x ≤ 0.01) Heterostructure

    А. С. Саидов, A. Yu. Leyderman, Sh. N. Usmonov +1

    ArticleSemiconductor materials and interfacesSemiconductors20184 citations
    ABI

  3. Liquid-phase epitaxy of the (Si2)1 − x − y (Ge2) x (GaAs) y substitutional solid solution (0 ≤ x ≤ 0.91, 0 ≤ y ≤ 0.94) and their electrophysical properties

    А. С. Саидов, Sh. N. Usmonov, М. С. Саидов

    ArticleSilicon Nanostructures and PhotoluminescenceSemiconductors20153 citations
    ABI

  4. Morphology and Current Transport in a Thin-Film Polycrystalline Au–ZnxCd1–xS–Mo Structure with Wide Photosensitivity Range in the Ultraviolet and Visible Radiation Spectral Region

    R. R. Kobulov, M. A. Makhmudov, S. Yu. Gerasimenko +1

    ArticleChalcogenide Semiconductor Thin FilmsApplied Solar Energy20182 citations
    ABI

  5. Peculiarities of the Current–Voltage Characteristic of n-GaP–p-(InSb)1 – x(Sn2)x Heterostructures

    А. С. Саидов, A. Yu. Leĭderman, Sh. N. Usmonov +1

    ArticleSemiconductor materials and interfacesTechnical Physics Letters20201 citations
    ABI

  6. Physico-Chemical Bases Cultivation Variable-gap Semiconductor Solid Solution Si1−xGex from the Liquid Phase

    A. Sh. Razzakov, A. Matnazarov, Mutabar Latipova +1

    ArticleSilicon Nanostructures and PhotoluminescenceBulletin of Science and Practice20200 citations
    ABI

  7. Structural Features of the Epitaxial Layer of the (GaAs)<sub>1−</sub><i><sub>y</sub></i><sub>−</sub><i><sub>z</sub></i>(Ge<sub>2</sub>)<i><sub>y</sub></i>(ZnSe)<i><sub>z</sub></i> Solid Solution Grown from a Bismuth Solution Melt

    А. С. Саидов, M. U. Kalanov, D. V. Saparov +4

    ArticleSemiconductor materials and interfacese-Journal of Surface Science and Nanotechnology20240 citations
    ABI

  8. Statical Currents of p-Si–n-Si1-δSnδ–n+-Si1-δSnδ (0≤δ≤0.04)-Structures with Tin Quantum Dots

    Khurshidjon M. Madaminov, Avazbek Sh. Ikromov, Azizbek A. Abdurakhmonov

    ArticleSemiconductor materials and interfacesEast European Journal of Physics20250 citations
    ABI