Works cited by this work

4 works

Work: Study of the Influence of Implanted Atoms on the Coefficients of the Sputtering of Silicon and Silicon with a Thin Oxide Film

1. Formation of nanodimensional structures on surfaces of GaAs and Si by means of ion implantation

   S. B. Donaev, Flyura Djurabekova, Д. А. Ташмухамедова +1

   ArticleIon-surface interactions and analysisPhysica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics201420 citations

   ABIABI:AkademIndex/openalex/2014.article.000062

2. Obtaining of epitaxial films of metal silicides by ion implantation and molecular beam epitaxy

   Б. Е. Умирзаков, Д. А. Ташмухамедова, E.U. Boltaev +1

   ArticleSemiconductor materials and interfacesMaterials Science and Engineering B200314 citations

   ABIABI:AkademIndex/openalex/2003.article.000028

3. Structure and electronic properties of nanoscale phases and nanofilms of metal silicides produced by ion implantation in combination with annealing

   Kh. Kh. Boltaev, Д. А. Ташмухамедова, Б. Е. Умирзаков

   ArticleSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201414 citations

   ABIABI:AkademIndex/openalex/2026.other.196457

4. Transition layer formation simulation during film deposition by an ion-molecular beam

   T.S. Pugacheva

   ArticleIon-surface interactions and analysisRadiation Effects19873 citations

   ABIABI:AkademIndex/openalex/2026.other.503216