Skip to main content
AkademIndex

Products

For developers

AkademBaseOpen API for the ecosystem
← Back to work

Works cited by this work

42 works

Work: Synthesis, Structure and Electro-Physical Properties n-GaAs–p-(GaAs)1 –x–y(Ge2)x(ZnSe)y Heterostructures (Review)

  1. Untitled

    Other1117 citations
    ABI

  2. Current Injection in Solids

    A. M. Stoneham

    Article197027 citations
    ABI

  3. Liquid-phase epitaxy of solid solutions (Ge2)1−x(ZnSe)x

    А. С. Саидов, A. Sh. Razzakov, V.A. Risaeva +1

    ArticleChalcogenide Semiconductor Thin FilmsMaterials Chemistry and Physics200125 citations
    ABI

  4. Current injection in solids

    Murray A. Lampert, Peter Mark

    Book197016 citations
    ABI

  5. X-ray diffraction diagnostics methods as applied to highly doped semiconductor single crystals

    I. L. Shul’pina, R. N. Kyutt, В. В. Ратников +3

    Article20109 citations
    ABI

  6. Structural Studies of the Epitaxial Layer of a Substitutional Solid Solution (GaAs)<sub>1−<i>x</i></sub>(ZnSe)<sub><i>x</i></sub> with Nanocrystals

    А. С. Саидов, Sh. N. Usmonov, D. V. Saparov

    ArticleQuantum Dots Synthesis And PropertiesAdvances in Materials Science and Engineering20198 citations
    ABI

  7. Growth of (GaAs)1 − x (ZnSe) x solid solution films and investigation of their structural and some photoelectric properties

    А. С. Саидов, М. С. Саидов, Sh. N. Usmonov +4

    ArticleChalcogenide Semiconductor Thin FilmsPhysics of the Solid State20118 citations
    ABI

  8. Dilute nonisovalent (II-VI)-(III-V) semiconductor alloys: Monodoping, codoping, and cluster doping in ZnSe-GaAs

    L. G. Wang, Alex Zunger

    Article20037 citations
    ABI

  9. Peculiarities of photosensitivity of n(GaAs)–p(GaAs)1–x–y (ZnSe) x (Ge2) y structures with quantum dots

    А. С. Саидов, С. З. Зайнабидинов, M. U. Kalanov +2

    ArticleSemiconductor Quantum Structures and DevicesApplied Solar Energy20156 citations
    ABI

  10. Growth, structure, and properties of GaAs-based (GaAs)1–x–y (Ge2) x (ZnSe) y epitaxial films

    S.Z. Zaynabidinov, А. С. Саидов, A. Yu. Leĭderman +4

    ArticleSemiconductor Quantum Structures and DevicesSemiconductors20165 citations
    ABI

  11. Properties of Semiconductor Alloys

    Sadao Adachi

    Book20095 citations
    ABI

  12. Epitaxial growth of ZnSe on GaAs with the use of the ZnSe compound as the source

    Sergey P. Suprun, V. N. Sherstyakova, E. V. Fedosenko

    Article20094 citations
    ABI

  13. Effect of nonstoichiometry and doping on the photoconductivity spectra of GeSe layered crystals

    Д. И. Блецкан, J. J. Madyar, V. N. Kabaciy

    Article20063 citations
    ABI

  14. The synthesis and photoelectric properties of Si-(Si2)1−x(ZnS)x epitaxial structures

    Б. Сапаев, А. С. Саидов

    ArticleSilicon Nanostructures and PhotoluminescenceTechnical Physics Letters20043 citations
    ABI

  15. Cation variations at semiconductor interfaces: ZnSe(001)/GaAs(001) superlattices

    H. H. Farrell, Randall A. LaViolette

    Article20043 citations
    ABI

  16. Untitled

    Other3 citations
    ABI

  17. MOVPE growth and characterization of ZnSe-GaAs heterovalent heterostructures

    Mitsuru Funato, Shizυo Fujita, Shigeo Fujita

    Article19952 citations
    ABI

  18. Chemical and structural aspects of annealed ZnSe/GaAs(001) heterostructures

    D. H. Mosca, W. H. Schreiner, Edson Massayuki Kakuno +6

    Article20022 citations
    ABI

  19. GaAs/Ge heterostructure photovoltaic cells fabricated by a combination of MOCVD and zinc diffusion techniques

    V. M. Andreev, В. П. Хвостиков, N. A. Kalyuzhnyĭ +3

    Article20042 citations
    ABI

  20. The possibility of improving the structural perfection of the new heterojunctions GaAs-(Ge2)1− x(ZnSe)x, Ge-(Ge2)1−x(ZnSe)x, GaP-(Ge2)1−x (ZnSe)x, and Si-(Ge2)1−x(ZnSe)x

    А. С. Саидов, É. A. Koshchanov, A. Sh. Razzakov

    ArticlePhase-change materials and chalcogenidesTechnical Physics Letters19982 citations
    ABI

  21. Anion variations at semiconductor interfaces: ZnSe(100)/GaAs(100) superlattices

    H. H. Farrell, Randall A. LaViolette

    Article20052 citations
    ABI

  22. Heat-voltaic effect of pSi-n(ZnSe)1 − x − y (Si2) x (GaP) y structures

    А. С. Саидов, М. С. Саидов, Sh. N. Usmonov +1

    ArticleSemiconductor materials and interfacesApplied Solar Energy20102 citations
    ABI

  23. Effect of high intrinsic ion concentrations on electron energies in solid solutions of III–V and II–VI semiconductors

    Maurice Glicksman, W. D. Kraeft

    Article19852 citations
    ABI

  24. Electric and luminescence properties of GaAs-AIIBIVCV2 single crystals

    I. K. Polushina, Yu. V. Rud, V. Yu. Rud’

    Article19992 citations
    ABI

  25. Tailoring Heterovalent Interface Formation with Light

    Kwangwook Park, Kirstin Alberi

    Article20172 citations
    ABI