Skip to main content
AkademIndex

Products

For developers

AkademBasesoonOpen API for the ecosystem
Latin
← Back to work

Works cited by this work

16 works

Work: On the Band-Gap Width of NiSi2 Nanocrystals Created in the Surface Region of Si Using Ion Implantation

  1. On the creation of ordered nuclei by ion bombardment for obtaining nanoscale si structures on the surface of CaF2 films

    Б. Е. Умирзаков, S. B. Donaev

    ArticleIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201721 citations
    ABI

  2. Investigation of change of the composition and structure of the CaF2/Si films surface at the low-energy bombardment

    Б. Е. Умирзаков, Д. А. Ташмухамедова, М. К. Рузибаева +2

    ArticleSilicon Nanostructures and PhotoluminescenceNuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms201413 citations
    ABI

  3. Escape Depth of Secondary and Photoelectrons from CdTe Films with a Ba Film

    Б. Е. Умирзаков, Д. А. Ташмухамедова, M. A. Tursunov +2

    ArticleElectron and X-Ray Spectroscopy TechniquesTechnical Physics201912 citations
    ABI

  4. Photoelectron Si 2p spectra of ultrathin CoSi2 layers formed on Si(100)2×1

    M. V. Gomoyunova, I. I. Pronin, N. R. Gall +2

    Article20039 citations
    ABI

  5. Laser Recrystallization and 3D Integration

    J.-P. Colinge

    Article19846 citations
    ABI

  6. Scanning tunneling microscopy observation of ultrathin epitaxial CoSi2(111) films grown at a high temperature

    Aleksandr Alekseev, D.A. Olyanich, T.V. Utas +3

    Article20156 citations
    ABI

  7. Control of the formation of ultrathin CoSi2 layers during the rapid thermal annealing of Ti/Co/Ti/Si(100) structures

    V. I. Rudakov, Yu. I. Denisenko, В. В. Наумов +1

    Article20115 citations
    ABI

  8. Photoemission spectroscopy of the evolution of ultra-thin Co films on Si(111) substrates upon annealing temperature

    Ki-jeong Kim, Tai‐Hee Kang, Kwang-woo Kim +2

    Article20005 citations
    ABI

  9. Structure of Epitaxial CoSi<sub>2</sub> Films on Si(111) Studied with Low-Energy Electron Diffraction (LEED)

    Ulrich Starke, J. Schardt, W. Weiß +3

    Article19984 citations
    ABI

  10. Formation of defects in GaAs and Si as a result of Pd deposition onto the surface

    И. А. Карпович, С. В. Тихов, E. L. Shobolov +1

    Article20064 citations
    ABI

  11. Surface Morphology of NiSi2/Si Films Obtained by the Method of Solid-Phase Deposition

    A. K. Tashatov, N. M. Mustafoyeva

    ArticleSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20203 citations
    ABI

  12. Electronic and Optical Properties of NiSi2/Si Nanofilms

    Б. Е. Умирзаков, Д. А. Ташмухамедова, A. K. Tashatov +1

    ArticleSurface and Thin Film PhenomenaTechnical Physics20193 citations
    ABI

  13. Potential variations around grain boundaries in impurity-doped BaSi2 epitaxial films evaluated by Kelvin probe force microscopy

    Daichi Tsukahara, Masako Baba, Syuta Honda +6

    Article20143 citations
    ABI

  14. Effects of defect clustering on optical properties of GaN by single and molecular ion irradiation

    Mohammad W. Ullah, A. Kuronen, K. Nordlund +4

    Article20132 citations
    ABI

  15. Electrical characterization and conduction mechanism of impurity-doped BaSi2 films grown on Si(111) by molecular beam epitaxy

    M. Ajmal Khan, T. Saito, Kotaro Nakamura +5

    Article20122 citations
    ABI

  16. Untitled

    Other1 citations
    ABI