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Works cited by this work

20 works

Work: Electrodifusion of Manganese Atoms in Silicon

  1. Silicon with binary elementary cells as a novel class of materials for future photoenergetics

    М. К. Бахадырханов, A. Sh. Mavlyanov, U. Kh. Sodikov +1

    ArticleSemiconductor materials and interfacesApplied Solar Energy201513 citations
    ABI

  2. Anomalous Photoelectric Phenomena in Silicon with Nanoclusters of Manganese Atoms

    М. К. Бахадырханов, С. Б. Исамов, Н. Ф. Зикриллаев +1

    ArticleSemiconductor materials and interfacesSemiconductors20218 citations
    ABI

  3. SPECTRAL DEPENDENCE OF THE PHOTOCONDUCTIVITY OF GеxSi1 – x TYPE GRADED-GAP STRUCTURES OBTAINED BY DIFFUSION TECHNOLOGY

    Н. Ф. Зикриллаев, S. Koveshnikov, С. Б. Исамов +2

    ArticleSemiconductor materials and interfacesSemiconductors20228 citations
    ABI

  4. Current Status of Silicon Studies with GexSi1-x Binary Compounds and Possibilities of Their Applications in Electronics

    Н. Ф. Зикриллаев, G. A. Kushiev, Sergey V. Koveshnikov +3

    ArticleSemiconductor materials and interfacesEast European Journal of Physics20238 citations
    ABI

  5. A Surface Study of Si Doped Simultaneously with Ga and Sb

    X.M. Iliyev, Sobir B. Isamov, B. O. Isakov +2

    ArticleSemiconductor Quantum Structures and DevicesEast European Journal of Physics20237 citations
    ABI

  6. X-Ray Diffraction and Raman Spectroscopy Analyses of GaSb-Enriched Si Surface Formed by Applying Diffusion Doping Technique

    Xalmurat M. Iliyev, В. Б. Оджаев, Sobir B. Isamov +5

    ArticleSilicon Nanostructures and PhotoluminescenceEast European Journal of Physics20236 citations
    ABI

  7. Development and Creation of a New Class of Graded-Gap Structures Based on Silicon with the Participation of Zn and Se Atoms

    Н. Ф. Зикриллаев, O. B. Tursunov, G. A. Kushiev

    ArticleSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry20235 citations
    ABI

  8. Optical Properties of GexSi1 – x Binary Compounds in Silicon

    Н. Ф. Зикриллаев, Habibjon Kushiev, Shahzodbek I. Hamrokulov +1

    ArticleSemiconductor materials and interfacesJournal of Nano- and Electronic Physics20235 citations
    ABI

  9. Nonisovalent Si-III-V and Si-II-VI alloys: Covalent, ionic, and mixed phases

    Joongoo Kang, Ji‐Sang Park, Pauls Stradins +1

    Article20175 citations
    ABI

  10. Solid Solubilities of Impurity Elements in Germanium and Silicon*

    F. A. Trumbore

    Article19604 citations
    ABI

  11. Nanoscale III–V on Si-based junctionless tunnel transistor for EHF band applications

    Yogesh Goswami, Pranav Kumar Asthana, Bahniman Ghosh

    Article20173 citations
    ABI

  12. Deep impurity levels and diffusion coefficient of manganese in silicon

    H. Nakashima, Kazuhito Hashimoto

    Article19913 citations
    ABI

  13. Fabrication of ZnS layer on silicon nanopillars surface for photoresistor application

    Jing Liu, Shuaipeng Yue

    Article20223 citations
    ABI

  14. The Mechanism of the Formation of Binary Compounds Between Zn and S Impurity Atoms in Si Crystal Lattice

    Н. Ф. Зикриллаев, Maruf K. Khakkulov, B. O. Isakov

    ArticleSilicon Nanostructures and PhotoluminescenceEast European Journal of Physics20232 citations
    ABI

  15. New Technological Solution for the Tailoring of Multilayer Silicon-based Systems with Binary Nanoclusters Involving Elements of Groups III and V

    N. F. Zikrillayev, С. Б. Исамов, B. O. Isakov +4

    ArticleSilicon Nanostructures and PhotoluminescenceJournal of Nano- and Electronic Physics20232 citations
    ABI

  16. On the origin of threading dislocations during epitaxial growth of III-Sb on Si(001): A comprehensive transmission electron tomography and microscopy study

    Michael Niehle, Jean‐Baptiste Rodriguez, L. Cerutti +2

    Article20172 citations
    ABI

  17. Theoretical analysis and modelling of degradation for III–V lasers on Si

    Jianzhuo Liu, Mingchu Tang, Huiwen Deng +7

    Article20222 citations
    ABI

  18. Binary Phase Diagrams and Thermodynamic Properties of Silicon and Essential Doping Elements (Al, As, B, Bi, Ga, In, N, P, Sb and Tl)

    Ahmad Mostafa, Mamoun Medraj

    Review article20172 citations
    ABI

  19. Untitled

    Other1 citations
    ABI

  20. Untitled

    Other1 citations
    ABI