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Works cited by this work

13 works

Work: The Mechanism of Current Transfer in n-GaAs – p(ZnSe)1-x-y(Ge2)x(GaAs1–δBiδ)y Heterostructures

  1. On the theory of sublinear current-voltage characteristics of semiconductor structures

    A. Yu. Leĭderman, P. M. Karageorgy‐Alkalaev

    Article19788 citations
    ABI

  2. Dilute nonisovalent (II-VI)-(III-V) semiconductor alloys: Monodoping, codoping, and cluster doping in ZnSe-GaAs

    L. G. Wang, Alex Zunger

    Article20037 citations
    ABI

  3. Mechanism of charge transfer in injection photodiodes based on the In-n +-CdS-n-CdS x Te1 − x -p-Zn x Cd1 − x Te-Mo structure

    Ш. А. Мирсагатов, A. Yu. Leĭderman, O. K. Ataboev

    ArticleChalcogenide Semiconductor Thin FilmsPhysics of the Solid State20136 citations
    ABI

  4. Statistics of Inter‐Impurity Recombination of Electrons and Holes in Semiconductors

    P. M. Karageorgy‐Alkalaev, A. Yu. Leĭderman

    ArticleSilicon and Solar Cell Technologiesphysica status solidi (b)19685 citations
    ABI

  5. Structural Peculiarities of the (ZnSe)1 – x – y(Ge2)x(GaAs1 – δBiδ)y Solid Solution with Various Nanoinclusions

    С. З. Зайнабидинов, Sharifa B. Utamuradova, Akramjon Y. Boboev

    ArticleChalcogenide Semiconductor Thin FilmsJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20224 citations
    ABI

  6. Possible influence of nonequilibrium carrier recombination rate saturation on photocell operation

    A. Yu. Leĭderman

    ArticleSilicon and Solar Cell TechnologiesApplied Solar Energy20084 citations
    ABI

  7. Structure, Morphology and Photoelectric Properties of n-GaAs--p-(GaAs)1--x(Ge2)х Heterostructure

    S.Z. Zaynabidinov, A.S. Saidov, Akramjon Y. Boboev +1

    ArticleSemiconductor materials and interfacesHerald of the Bauman Moscow State Technical University Series Natural Sciences20222 citations
    ABI

  8. Effect of Uniaxial Elastic Deformation on the Current–Voltage Characteristic of Surface-Barrier Sb–p-Si〈Mn〉–Au Diodes

    О. О. Маматкаримов, О. Химматкулов, I. G. Tursunov

    ArticleSemiconductor materials and interfacesSemiconductors20202 citations
    ABI

  9. Peculiarities of the Current–Voltage Characteristic of n-GaP–p-(InSb)1 – x(Sn2)x Heterostructures

    A.S. Saidov, A. Yu. Leĭderman, Sh. N. Usmonov +1

    ArticleSemiconductor materials and interfacesTechnical Physics Letters20201 citations
    ABI

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    Other1 citations
    ABI

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    Other1 citations
    ABI

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    Other1 citations
    ABI

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    Other1 citations
    ABI