Works cited by this work

28 works

Work: Formation of (Si2)1-x(GaP)x gradient composition solid solutions during growth from a tin solution-melt

1. Features of liquid-phase epitaxy of new solid solutions of (GaAs)1−y−z(Ge₂)y(ZnSe)z and their photoelectric properties

   A.S. Saidov, D. V. Saparov, Sh. N. Usmonov +2

   ArticleChalcogenide Semiconductor Thin FilmsInternational Journal of Modern Physics B20226 citations

   ABIABI:AkademIndex/openalex/2022.article.000686

2. Growth and Morphological Study of Graded-Gap Si–Si1 – xGex–GaAs Structures

   A.S. Saidov, A. Sh. Razzokov

   ArticleSemiconductor materials and interfacesCrystallography Reports20225 citations

   ABIABI:AkademIndex/openalex/2022.article.000489

3. MBE growth of GaP on a Si substrate

   M. S. Sobolev, А. А. Лазаренко, E. V. Nikitina +3

   Article20154 citations

   ABIABI:AkademIndex/openalex/2026.other.373295

4. Features of growing Si- and Si_1-<i>x</i>Ge_<i>x</i>-single-crystal films from solution-melt based on tin

   A. Sh. Razzokov, A.S. Saidov, V. V. Gіrzhon +1

   ArticleSilicon Nanostructures and PhotoluminescenceJournal of Physical Studies20222 citations

   ABIABI:AkademIndex/openalex/2022.article.000838

5. Studies of the crystal structure of solid solutions (Sn2)1−x−y(GaAs)x(ZnSe)y, (GaAs)1−x(ZnSe)x grown from liquid phase

   A. Sh. Razzokov, A.S. Saidov, B. Allabergenov +3

   ArticleChalcogenide Semiconductor Thin FilmsJournal of Crystal Growth20232 citations

   ABIABI:AkademIndex/openalex/2023.article.002347

6. Structural and Spectroscopic Studies of Epitaxial GaAs Layers Grown on Compliant Substrates Based on a Superstructure Layer and Protoporous Silicon

   П. В. Середин, D. L. Goloshchapov, Yu. Yu. Khudyakov +5

   Article20212 citations

   ABIABI:AkademIndex/openalex/2026.other.373304

7. Optimal Regime for Growth of Epitaxial Germanium Layers from the Liquid Phase Based on Thermodynamic Calculations

   A. Sh. Razzokov, Khushnudbek Eshchanov

   ArticlePhotonic and Optical DevicesInternational Journal of Thermodynamics20221 citations

   ABIABI:AkademIndex/openalex/2022.article.001741

8. Untitled

   Other1 citations

   ABIABI:AkademIndex/openalex/2026.other.778806

9. Untitled

   Other1 citations

   ABIABI:AkademIndex/openalex/2026.other.778807

10. Untitled

    Other1 citations

    ABIABI:AkademIndex/openalex/2026.other.778808

11. Untitled

    Other1 citations

    ABIABI:AkademIndex/openalex/2026.other.778809

12. Untitled

    Other1 citations

    ABIABI:AkademIndex/openalex/2026.other.778810

13. Untitled

    Other1 citations

    ABIABI:AkademIndex/openalex/2026.other.778811

14. Untitled

    Other1 citations

    ABIABI:AkademIndex/openalex/2026.other.778812

15. Untitled

    Other1 citations

    ABIABI:AkademIndex/openalex/2026.other.778813

16. Untitled

    Other1 citations

    ABIABI:AkademIndex/openalex/2026.other.778814

17. Untitled

    Other1 citations

    ABIABI:AkademIndex/openalex/2026.other.778815

18. Untitled

    Other1 citations

    ABIABI:AkademIndex/openalex/2026.other.778816

19. Untitled

    Other1 citations

    ABIABI:AkademIndex/openalex/2026.other.778817

20. Untitled

    Other1 citations

    ABIABI:AkademIndex/openalex/2026.other.778818

21. Untitled

    Other1 citations

    ABIABI:AkademIndex/openalex/2026.other.778819

22. Untitled

    Other1 citations

    ABIABI:AkademIndex/openalex/2026.other.778820

23. Untitled

    Other1 citations

    ABIABI:AkademIndex/openalex/2026.other.778821

24. Untitled

    Other1 citations

    ABIABI:AkademIndex/openalex/2026.other.778822

25. Untitled

    Other1 citations

    ABIABI:AkademIndex/openalex/2026.other.778823