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Works cited by this work

19 works

Work: The Influence of Structural Defects in Silicon on the Formation of Photosensitive Mn4Si7–Si❬Mn❭–Mn4Si7 and Mn4Si7–Si❬Mn❭–M Heterostructures

  1. Physics of Semiconductor Devices

    J.-P. Colinge, Cindy Colinge

    Book200258 citations
    ABI

  2. The physics of semiconductor devices

    H. L. Grubin

    Article197918 citations
    ABI

  3. Photoelectric properties of higher manganese silicide (HMS)-SilangleMnrangle-M structures

    T. S. Kamilov, V. P. Chirva, D.K. Kabilov

    ArticleSemiconductor materials and interfacesSemiconductor Science and Technology199911 citations
    ABI

  4. On the mechanism of appearance of space-charge-limited current in higher manganese silicide (HMS)--HMS and HMS--M structures

    T. S. Kamilov, B L Sadullaev, U Sh Ganiev +1

    Article19988 citations
    ABI

  5. Electron microscopy characterization of higher manganese silicide film structure on silicon

    Andrey Orekhov, T. S. Kamilov, Anton S. Orekhov +3

    ArticleSemiconductor materials and interfacesNanotechnologies in Russia20167 citations
    ABI

  6. Electronic properties of semiconducting silicides: fundamentals and recent predictions

    L. Ivanenko, В. Л. Шапошников, А. Б. Филонов +6

    Article20046 citations
    ABI

  7. Structure of thermoelectric films of higher manganese silicide on silicon according to electron microscopy data

    Andrey Orekhov, T. S. Kamilov, B.V. Ibragimova +2

    ArticleSemiconductor materials and interfacesSemiconductors20175 citations
    ABI

  8. On the possibility of developing thermoelectric sensors based on multielement higher manganese silicide film structures

    T. S. Kamilov, D. K. Kabilov, I. S. Samiev +1

    Article20053 citations
    ABI

  9. Influence of structural defects in silicon on formation of photosensitive heterostructures Mn4Si7-Si-Mn4Si7 and Mn4Si7-Si-M

    T. S. Kamilov, А.С. Рысбаев, V. V. Klechkovskaya +3

    ArticleSemiconductor materials and interfacesEurasian journal of physics and functional materials20183 citations
    ABI

  10. Transport Properties

    L. Ivanenko, H. Lange, A. Heinrich

    Chapter20003 citations
    ABI

  11. Photoconduction amplification and quenching in the Mn4Si7-Si〈Mn〉-Mn4Si7 and Mn4Si7-Si〈Mn〉-M heterostructures

    T. S. Kamilov, I. V. Ernst, A. Yu. Samunin

    ArticleSemiconductor materials and interfacesTechnical Physics20142 citations
    ABI

  12. Formation of higher manganese silicide films on silicon

    T. S. Kamilov, D.K. Kabilov, I.S. Samiev +3

    ArticleSemiconductor materials and interfacesTechnical Physics20052 citations
    ABI

  13. Defect engineering in implantation technology of silicon light-emitting structures with dislocation-related luminescence

    Н. А. Соболев

    Article20102 citations
    ABI

  14. On the growth of higher manganese silicide films on silicon

    Andrey Orekhov, T. S. Kamilov, Abdumalik Gaibov +2

    ArticleSemiconductor materials and interfacesTechnical Physics20102 citations
    ABI

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    Other1 citations
    ABI

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    Other1 citations
    ABI

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    Other1 citations
    ABI

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    Other1 citations
    ABI

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    Other1 citations
    ABI