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Works citing this work

15 works

Work: Formation of nanosize silicides films on the Si(111) and Si(100) surfaces by low-energy ion implantation

  1. Formation and Electronic Structure of Barium-Monosilicide- and Barium-Disilicide Films

    M. T. Normurodov, А.С. Рысбаев, I. R. Bekpulatov +2

    ArticleSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques202117 citations
    ABI

  2. Effect of thermal and laser annealing on the atom distribution profiles in Si(111) implanted with P+ and B+ ions

    А.С. Рысбаев, J. B. Khujaniyozov, I. R. Bekpulatov +2

    ArticleIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201712 citations
    ABI

  3. Obtaining higher manganese silicide films with high thermoelectric properties

    I. R. Bekpulatov, D.S. Shomukhammedova, Д. М. Шукурова +1

    ArticleSemiconductor materials and interfacesE3S Web of Conferences20239 citations
    ABI

  4. Formation of photoelectron spectra of alloys niobium-molybdenum-zirconium

    Y. S. Ergashov, Burkhon Donaev, Sherzod Khudainazarov +1

    ArticleElectron and X-Ray Spectroscopy TechniquesE3S Web of Conferences20216 citations
    ABI

  5. Investigation of optical and electrophysical properties of Mn4Si7 coatings of different thickness

    Б.Д. Игамов, I. R. Bekpulatov, Gunel Imanova +2

    ArticleSemiconductor materials and interfacesPhysics and Chemistry of Solid State20245 citations
    ABI

  6. Changes in the electronic structure of the Si surface as a result of ion implantation

    S. B. Donaev, Umida Ziyamukhamedova, M. Kenjaeva +3

    ArticleIon-surface interactions and analysisE3S Web of Conferences20234 citations
    ABI

  7. The dependence of the parameters of energy bands on the depth of the ion-doped layer for Si implanted with ions Ba+

    S. B. Donaev, N. M. Mustafaeva, Azizakhon Maksumkhanova +1

    ArticleIon-surface interactions and analysisAIP conference proceedings20224 citations
    ABI

  8. The Morphology and Electronic Properties of Si Nanoscale Structures on a CaF2 Surface

    Б. Е. Умирзаков, Р. Х. Ашуров, S. B. Donaev

    ArticleSemiconductor materials and interfacesTechnical Physics20194 citations
    ABI

  9. Structure of МеSi Silicide Films (Me: Li, Rb, K and Cs) According to Electron Microscopy Data and the Diffraction of Slow Electrons

    M.T. Normuradov, A. S. Risbaev, J. B. Khujaniyozov +1

    ArticleSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20202 citations
    ABI

  10. High-Sensitivity Temperature Sensor on the Basis of Single-Crystal Si(111) Implanted from Multiple Directions with P+ and B+ Ions

    А.С. Рысбаев, M. T. Normurodov, A.M. Rakhimov +2

    ArticleIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20201 citations
    ABI

  11. Investigation on the Electronic Structure of Nanosized Barium Monosilicide Films Produced by Low-energy Implantation of Ba<sup>+</sup> Ions in Si

    Gunel Imanova, I. R. Bekpulatov

    ArticleSemiconductor materials and interfacesAmerican Journal of Nano Research and Applications20211 citations
    ABI

  12. Optimum technological modes of ion implantation and subsequent annealing for formation of thin nanosized silicide films

    I. R. Bekpulatov, Ilkhom Turapov, S. T. Abraeva +1

    ArticleSemiconductor materials and interfacesE3S Web of Conferences20211 citations
    ABI

  13. Composition and Morphology of A Si(111) Surface with a SiO2 Surface Film of Different Thicknesses

    Б. Е. Умирзаков, S. B. Donaev, R. M. Yorkulov +2

    ArticleSilicon Nanostructures and PhotoluminescenceSemiconductors20220 citations
    ABI

  14. Study of the profiles of the distribution of atoms of the contacting material over the depth of pure and ion-doped silicon

    S. B. Donaev, Ganjimurod Shirinov, Surayyo Ergasheva +3

    ArticleSilicon Nanostructures and PhotoluminescenceE3S Web of Conferences20230 citations
    ABI

  15. Thermal sensor based on si single crystal implanted with different parties P<sup>+</sup> and B<sup>+</sup> ions

    I. R. Bekpulatov, Sh. K. Saliyeva, Z. R. Saidakhmedova +1

    ArticleSemiconductor materials and interfacesE3S Web of Conferences20230 citations
    ABI