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Works cited by this work

9 works

Work: Structural Peculiarities of the (ZnSe)1 – x – y(Ge2)x(GaAs1 – δBiδ)y Solid Solution with Various Nanoinclusions

  1. X-ray diffraction diagnostics methods as applied to highly doped semiconductor single crystals

    I. L. Shul’pina, R. N. Kyutt, В. В. Ратников +3

    Article20109 citations
    ABI

  2. Growth of (GaAs)1 − x (ZnSe) x solid solution films and investigation of their structural and some photoelectric properties

    А. С. Саидов, М. С. Саидов, Sh. N. Usmonov +4

    ArticleChalcogenide Semiconductor Thin FilmsPhysics of the Solid State20118 citations
    ABI

  3. Growth, structure, and properties of GaAs-based (GaAs)1–x–y (Ge2) x (ZnSe) y epitaxial films

    S.Z. Zaynabidinov, А. С. Саидов, A. Yu. Leĭderman +4

    ArticleSemiconductor Quantum Structures and DevicesSemiconductors20165 citations
    ABI

  4. Features of the Properties of the Surface of (GaAs)1 – x – у(Ge2)x(ZnSe)y Semiconductor Solid Solution with ZnSe Quantum Dots

    С. З. Зайнабидинов, А. С. Саидов, Akramjon Y. Boboev +1

    ArticleSemiconductor Quantum Structures and DevicesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20214 citations
    ABI

  5. Photosensitivity of pSi-n(Si2)1–x–y(Ge2) x (ZnSe) y heterostructures with quantum dots

    А. С. Саидов, Sh. N. Usmonov, K. A. Amonov +2

    ArticleSemiconductor materials and interfacesApplied Solar Energy20174 citations
    ABI

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    Other1 citations
    ABI

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    Other1 citations
    ABI

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    Other1 citations
    ABI

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    Other1 citations
    ABI