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Works cited by this work

13 works

Work: Effect of the Implantation of Al+ Ions on the Composition, Electronic and Crystalline Structure of the GaP(111) Surface

  1. Formation of nanodimensional structures on surfaces of GaAs and Si by means of ion implantation

    S. B. Donaev, Flyura Djurabekova, Д. А. Ташмухамедова +1

    ArticleIon-surface interactions and analysisPhysica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics201420 citations
    ABI

  2. Optimum ion implantation and annealing conditions for stimulating secondary negative ion emission

    З. А. Исаханов, Z. E. Mukhtarov, Б. Е. Умирзаков +1

    ArticleIon-surface interactions and analysisTechnical Physics201119 citations
    ABI

  3. Electronic structure and optical properties of CaF2 films under low energy Ba+ ion-implantation combined with annealing

    Б. Е. Умирзаков, T.S. Pugacheva, A.T. Tashatov +1

    ArticleInorganic Fluorides and Related CompoundsNuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms200016 citations
    ABI

  4. Structure and electronic properties of nanoscale phases and nanofilms of metal silicides produced by ion implantation in combination with annealing

    Kh. Kh. Boltaev, Д. А. Ташмухамедова, Б. Е. Умирзаков

    ArticleSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201414 citations
    ABI

  5. Electronic structure of Ga1–x Al x As nanostructures grown on the GaAs surface by ion implantation

    S. B. Donaev, Б. Е. Умирзаков, Д. А. Ташмухамедова

    ArticleIon-surface interactions and analysisTechnical Physics201513 citations
    ABI

  6. Superstructured ordering in Al x Ga1 − x As and Ga x In1 − x P alloys

    П. В. Середин, �. P. Domashevskaya, I. N. Arsentyev +3

    Article20136 citations
    ABI

  7. The structure of porous gallium phosphide

    T. N. Zavaritskaya, A. Kvit, N. N. Melnik +1

    Article19983 citations
    ABI

  8. Theory of electronic structure evolution in GaAsN and GaPN alloys

    Paul R. C. Kent, Alex Zunger

    Article20013 citations
    ABI

  9. Solar cell efficiency tables (version 49)

    Martin A. Green, Keith Emery, Yoshihiro Hishikawa +4

    Article20163 citations
    ABI

  10. A Lightweight Flexible Solar Cell Based on a Heteroepitaxial InGaP/GaAs Structure

    М. А. Putyato, N. A. Valisheva, М. О. Петрушков +8

    Article20193 citations
    ABI

  11. Optoelectronic phenomena in GaAs and GaP layers prepared by nitrogen treatment

    V. F. Agekyan, V. I. Ivanov-Omskiĭ, V. N. Knyazevskii +2

    Article19982 citations
    ABI

  12. Study of defects in heterostructures with GaPAsN and GaPN quantum wells in the GaP matrix

    Oleg I. Rumyantsev, P. N. Brunkov, E. V. Pirogov +1

    Article20102 citations
    ABI

  13. Untitled

    Other1 citations
    ABI