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6 works

Work: Scanning tunneling microscopy observation of ultrathin epitaxial CoSi2(111) films grown at a high temperature

  1. Nanodimensional CoSiO Films Obtained by Ion Implantation on a CoSi2 Surface

    S. B. Donaev

    ArticleSemiconductor materials and devicesTechnical Physics Letters20204 citations
    ABI

  2. Electronic and Optical Properties of NiSi2/Si Nanofilms

    Б. Е. Умирзаков, Д. А. Ташмухамедова, A. K. Tashatov +1

    ArticleSurface and Thin Film PhenomenaTechnical Physics20193 citations
    ABI

  3. Obtaining nanoscale CoSiO/Si/CoSi<sub>2</sub> systems for increasing the range of light ray absorption energy

    S. B. Donaev, Б. Е. Умирзаков, D U Sobirova +2

    ArticleSilicon Nanostructures and PhotoluminescenceIOP Conference Series Earth and Environmental Science20202 citations
    ABI

  4. Electronic Structure and Properties of Nanoscale Structures Created on the Surface of a Free Si/Cu Film System

    З. А. Исаханов, R. M. Yorkulov, Б. Е. Умирзаков +2

    ArticleIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20212 citations
    ABI

  5. Formation of Nanodimensional SiO2 Films on the Surface of a Free Si/Cu Film System by $${\text{O}}_{2}^{ + }$$ Ion Implantation

    Б. Е. Умирзаков, М. К. Рузибаева, З. А. Исаханов +1

    ArticleIon-surface interactions and analysisTechnical Physics20192 citations
    ABI

  6. On the Band-Gap Width of NiSi2 Nanocrystals Created in the Surface Region of Si Using Ion Implantation

    N. M. Mustafoeva, A. K. Tashatov, Б. Е. Умирзаков

    ArticleSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20230 citations
    ABI