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Works cited by this work

15 works

Work: Influence of Various Impacts on the Composition and Structure of the Surface of Single-Crystal Si

  1. Electron spectroscopy of the nanostructures created in Si, GaAs, and CaF2 surface layers using low-energy ion implantation

    Б. Е. Умирзаков, Д. А. Ташмухамедова, D. M. Muradkabilov +1

    ArticleSemiconductor materials and interfacesTechnical Physics201319 citations
    ABI

  2. Obtaining of epitaxial films of metal silicides by ion implantation and molecular beam epitaxy

    Б. Е. Умирзаков, Д. А. Ташмухамедова, E.U. Boltaev +1

    ArticleSemiconductor materials and interfacesMaterials Science and Engineering B200314 citations
    ABI

  3. Method for additional purification of the surface of Si(111) single crystal

    A. S. Risbaev, J. B. Khujaniyazov, I. R. Bekpulatov +1

    ArticleMaterial Properties and Failure MechanismsJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201712 citations
    ABI

  4. Features of CoSi2 phase formation by two-stage rapid thermal annealing of Ti/Co/Ti/Si(100) structures

    V. I. Rudakov, Yu. I. Denisenko, В. В. Наумов +1

    Article20119 citations
    ABI

  5. Surface Science

    Kenjiro Oura, Michiko Katayama, А. В. Зотов +2

    Book20035 citations
    ABI

  6. Effect of Chemical Treatment of a Silicon Surface on the Quality and Structure of Silicon-Carbide Epitaxial Films Synthesized by Atom Substitution

    I. P. Kalinkin, С. А. Кукушкін, А. В. Осипов

    Article20184 citations
    ABI

  7. Formation of InAs nanoclusters in silicon by high-dose ion implantation: Experimental data and simulation results

    А. Ф. Комаров, Ф. Ф. Комаров, O. V. Milchanin +5

    Article20153 citations
    ABI

  8. Using of ion implantation for obtaining nanostructures with the wide band GaP based on GaP

    S. B. Donaev, V N Karimova, A T Azimov +2

    ArticleNanowire Synthesis and ApplicationsIOP Conference Series Earth and Environmental Science20203 citations
    ABI

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    Other1 citations
    ABI

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    Other1 citations
    ABI

  11. Untitled

    Other1 citations
    ABI

  12. Untitled

    Other1 citations
    ABI

  13. Untitled

    Other1 citations
    ABI

  14. Untitled

    Other1 citations
    ABI

  15. Optimum technological modes of ion implantation and subsequent annealing for formation of thin nanosized silicide films

    I. R. Bekpulatov, Ilkhom Turapov, S. T. Abraeva +1

    ArticleSemiconductor materials and interfacesE3S Web of Conferences20211 citations
    ABI